Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes

Li Chen; Jie Sun; Wei Guo; Jason Hoo; Wei Lin; Hangyang Chen; Houqiang Xu; Long Yan; Shiping Guo; Junyong Kang; Jichun Ye

doi:10.1364/PRJ.459897

Journals >Photonics Research >Volume 10 >Issue 12 >Page 2778 > Article

Photonics Research
Vol. 10, Issue 12, 2778 (2022)

Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes

Li Chen^{1、2、†,*}, Jie Sun^1、†, Wei Guo^1、2, Jason Hoo³, Wei Lin⁴, Hangyang Chen⁴, Houqiang Xu^1、5, Long Yan³, Shiping Guo³, Junyong Kang⁴, and Jichun Ye^1、2、6

Author Affiliations

¹Zhejiang Engineering Research Center for Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China

²Yongjiang Laboratory, Ningbo 315201, China

³Advanced Micro-Fabrication Equipment Inc., Shanghai 201201, China

⁴Department of Physics, Xiamen University, Xiamen 361005, China

⁵University of Chinese Academy of Sciences, Beijing 100049, China

⁶e-mail:

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DOI: 10.1364/PRJ.459897 Cite this Article Set citation alerts

Li Chen, Jie Sun, Wei Guo, Jason Hoo, Wei Lin, Hangyang Chen, Houqiang Xu, Long Yan, Shiping Guo, Junyong Kang, Jichun Ye. Multi-step in situ interface modification method for emission enhancement in semipolar deep-ultraviolet light emitting diodes[J]. Photonics Research, 2022, 10(12): 2778 Copy Citation Text

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