• Infrared and Laser Engineering
  • Vol. 47, Issue 12, 1220003 (2018)
Qiu Wenfu1、2、*, Lin Zhongxi1, and Su Hui1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • show less
    DOI: 10.3788/irla201847.1220003 Cite this Article
    Qiu Wenfu, Lin Zhongxi, Su Hui. Monolithically integrated low dark current 1.3 μm laser diode and detector chip[J]. Infrared and Laser Engineering, 2018, 47(12): 1220003 Copy Citation Text show less
    References

    [1] Kim D C, Kown O K, Kim H S, et al. Experimental comparison between front-side and rear-side signal-monitoring in RSOA transistor outline can modules with monitor-photo diode and thermo electric cooler[J]. IEEE Photon Technol Lett, 2010, 22(20): 1527-1529.

    [2] Wang De, Li Xueqian. Lasted development and applications of semiconductor lasers[J]. Optics and Precision Engineering, 2001, 9(3): 279-283. (in Chinese)

    [3] Hai Yina, Zou Yonggang, Tian Kun, et al. Research progress of horizontal cavity surface emitting semiconductor lasers[J]. Chinese Optics, 2017, 10(2): 194-206. (in Chinese)

    [4] Wu Guiying. The development of optical communication [J]. Optics and Precision Engineering, 1978(2): 65-67. (in Chinese)

    [5] Kobayashi W, Arai M, Yamanaka T, et al. Design and fabrication of 10-/40-Gb/s, uncooled electroabsorption modulator integrated DFB laser with butt-joint structure[J]. J Lightwave Technol, 2010, 28(1): 164-171.

    [6] Shinoda K, Makino S, Kitatani T, et al. InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices[J]. IEEE Journal of Quantum Electron, 2009, 45(9): 1201-1209.

    [7] Takahashi H, Shimamura T, Sugiyama T, et al. High-power 25 Gb/s electroabsorption modulator integrated with a laser diode[J]. IEEE Photon Technol Lett, 2009, 21(10): 633-635.

    [8] Yang J, Bhattacharya P, Wu Z. Monolithic integration of InGaAs-GaAs quantum-dot laser and quantum-well electroabsorption modulator on silicon[J]. IEEE Photon Technol Lett, 2007, 19(10): 747.

    [9] Hu Yadong, Hu Qiaoyun, Su Bin, et al. Impact of dark current on SWIR polarimetry accuracy[J]. Infrared and Laser Engineering, 2015, 44(8): 2375-2381. (in Chinese)

    [10] Gong Haime, Liu Dafu. Developments and trend in spaceborne infrared detectors. [J]. Infrared and Laser Engineering, 2008, 37(1): 19-24. (in Chinese)

    [11] Matsui T, Sugimoto H, Ohtsuka K, et al. GaInAsAP/InP mass transport laser monolithically intefrated with photo-detector using reactive ion etching[J]. Electron Lett, 1989, 25(15): 955-956.

    [12] Dutta N K, Cella T, Zilko J L, et al. Monolithically integrated laser/photo-diode[J]. Electron Lett, 1988, 24(6): 355-356.

    [13] Yang Chyida, Lei Pohsun. Lateral power-monitoring photodiode monolithically integrated into 1.3 μm GaInAsP laser[J]. Solid-State Electronics, 2012, 67(1): 63-69.

    [14] LUXNET corporation. 1 310/1 550 nm Power-Monitor PIN.[EB/OL]. [2017-12-09]. http: //www.luxnetcorp.com.tw/datasheet_files/DI0A-7025%20_version3.1_%5B3%5D.pdf

    [15] Xu Lefei, Liu Dafu, Gong Haimei, et al. Low temperature spectroscopy quantification of integrated dual band chip package[J]. Chinese Optics, 2017, 10(6): 744-751. (in Chinese)

    Qiu Wenfu, Lin Zhongxi, Su Hui. Monolithically integrated low dark current 1.3 μm laser diode and detector chip[J]. Infrared and Laser Engineering, 2018, 47(12): 1220003
    Download Citation