[1] Yang H, Chen L H, Zhang S M, et al.. Material growth and device fabrication of GaN based blue violet laser diodes [J]. Chinese J Semiconductors, 2005, 26(2): 414-417.
[2] Liu H B, Tao J, Gautreau Y, et al.. Simulation of thermal stresses in SiC-Al2O3 composite tritium penetration barrier by finiteelement analysis [J]. Materials and Design, 2009, 30(8): 2785-2790.
[3] Song S W, Liang H W, Shen R S, et al.. Influence of in-situ SiNx interlayer on strain relief and optical character of GaN epilayer grown on 6H-SiC [J]. Chinese J Luminescence, 2013, 34(8): 1017-1021.
[4] Wang T, Cui Z Z, Xu L X. Thermoelastic stress field investigation of GaN material for laser lift of technique based on finite element method[J]. Chin Phys Lett, 2009, 26(9): 094601.
[5] Valeria C, Cristina L, Aldo R B. Numerical models for thermal residual stresses in Al2O3 platelets/borosilicate glass matrix composites [J]. Materials Science and Engineering, 2002, 323(1-2): 246-250.
[6] Hu Q, Wei T B, Duan R F, et al.. Characterization of thick GaN films directly grown on wet etching patterned sapphire by HVPE [J]. Chin Phys Lett, 2009, 26(9): 096801.
[8] Wang Minggang, Yang Weifeng, Hu Dongdong, et al.. Patterned sapphire substrate technique [J]. Laser & Optoelectronics Process, 2012, 49(8): 080005.
[9] Jiang Yang, Luo Yi, Xi GuangYi, et al.. Effect of AlGaN intermediate layer on residual stress control and surface morphology of GaN grown on 6H-SiC substrate by metal organic vapour phase epitaxy [J]. Acta Physica Sinica, 2009, 58(10): 7282-7287.
[10] Liu Xing, Zhu Jiaqi, Han Jiecai. Thermal stresses in elastic multilayer systems [J]. Mechanics in Engineering, 2014, 36(4): 453-456.
[11] Dong Wei, Zuo Ran, Lai Xiaohui, et al.. Simulation of stresses in GaN thin film on sapphire [J]. Laser & Optoelectronics Progress, 2013, 50(7): 073101.
[12] Yin Jiayun, Liu Bo, Zhang Sen, et al.. Stress analysis of GaN materials grown on Si (111) substrates [J]. Micronanoelectronic Technology, 2008, 45(12): 703-705.
[13] Liang Dong, Yuan Fengpo, Zhang Baoshun, et al.. Analysis of strain on AlGaN/AlN structures grown on sapphire substrates [J]. Semiconductor Technology, 2007, 32(19): 765-767.
[14] Yan Jianfeng, Zhang Jie, Guo Liwei, et al.. Growth and stress analysis of a-plane GaN films grown on r-plane sapphire substrate with a two-step AlN buffer layer [J]. Chinese J Semiconductors, 2007, 28(10): 1562-1567.
[16] Wang Huanyou, Li Yalan, Xie Guangqi, et al.. Influence of cone-shaped pattern sapphire substrates on dislocation density and stress-strain of GaN epifilms by MOCVD [J]. Scientia Sinica Physica Mechania & Astronomica, 2013, 43(11): 1519-1524.