Range Analysis of Thermal Stress and Displacement of GaN films on Al2O3 Substrate

Wang Xiaozeng

doi:10.3788/lop52.041602

Journals >Laser & Optoelectronics Progress >Volume 52 >Issue 4 >Page 41602 > Article

Laser & Optoelectronics Progress
Vol. 52, Issue 4, 41602 (2015)

Range Analysis of Thermal Stress and Displacement of GaN films on Al₂O₃ Substrate

Wang Xiaozeng^*

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[in Chinese]

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DOI: 10.3788/lop52.041602 Cite this Article Set citation alerts

Wang Xiaozeng. Range Analysis of Thermal Stress and Displacement of GaN films on Al₂O₃ Substrate[J]. Laser & Optoelectronics Progress, 2015, 52(4): 41602 Copy Citation Text

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Wang Xiaozeng. Range Analysis of Thermal Stress and Displacement of GaN films on Al₂O₃ Substrate[J]. Laser & Optoelectronics Progress, 2015, 52(4): 41602

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