The development of InP based antimony free 2~3 μm band lasers and photodetectors in our laboratory are introduced, including the 2~2.5 μm band type I InGaAs MQW lasers under pseudomorphic triangle well scheme, 2.5~3.0 μm band type I InAs MQW lasers under metamorphic strain compensation well scheme, as well as InGaAs photodetectors with high indium contents with cut-off wavelength larger than 1.7 μm. All device structures were grown using gas source MBE method. CW operation above room temperature has been reached for the lasers with wavelength less than 2.5 μm, which have gained actual applications. Pulse operation of 2.9 μm lasers at TE temperature also has been reached. The dark current of 2.6 μm InGaAs photodetectors has been decreased notably with the inserting of supperlattice electron barriers. These types of epitaxial materials have been used to the development of FPA modules for space remote sensing applications.