Wensi Cai, Zhigang Zang, Liming Ding. Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. Journal of Semiconductors, 2021, 42(3): 030203

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- Journal of Semiconductors
- Vol. 42, Issue 3, 030203 (2021)
![(Color online) (a) Transfer characteristics of IGZO TFTs treated with different SAMs under positive bias stress. Insets show the chemical structures of SAM molecules. Reproduced with permission[11], Copyright 2021, IOP Publishing. (b) Transfer characteristics of IGZO TFTs with and without OTS treatment. (c) OTS-treated IGZO TFTs before and after being stored in air for a year. Reproduced with permission[8], Copyright 2021, American Chemical Society.](/richHtml/jos/2021/42/3/030203/img_1.jpg)
Fig. 1. (Color online) (a) Transfer characteristics of IGZO TFTs treated with different SAMs under positive bias stress. Insets show the chemical structures of SAM molecules. Reproduced with permission[11 ], Copyright 2021, IOP Publishing. (b) Transfer characteristics of IGZO TFTs with and without OTS treatment. (c) OTS-treated IGZO TFTs before and after being stored in air for a year. Reproduced with permission[8 ], Copyright 2021, American Chemical Society.
![(Color online) (a) Chemical structure of ODPA and contact angles of AlOx, SAM-treated AlOx before and after annealing. (b) Transfer characteristics of ZnO TFTs. Reproduced with permission[13], Copyright 2021, Wiley-VCH. (c) Transfer characteristics of IGZO TFTs with bare AlxOy and OTS-treated AlxOy as gate dielectrics. (d) Transfer characteristics of IGZO TFTs with bare HfOx and OTS-treated HfOx under positive bias stress. Reproduced with permission[14], Copyright 2021, Wiley-VCH.](/richHtml/jos/2021/42/3/030203/img_2.jpg)
Fig. 2. (Color online) (a) Chemical structure of ODPA and contact angles of AlOx , SAM-treated AlOx before and after annealing. (b) Transfer characteristics of ZnO TFTs. Reproduced with permission[13 ], Copyright 2021, Wiley-VCH. (c) Transfer characteristics of IGZO TFTs with bare Alx Oy and OTS-treated Alx Oy as gate dielectrics. (d) Transfer characteristics of IGZO TFTs with bare HfOx and OTS-treated HfOx under positive bias stress. Reproduced with permission[14 ], Copyright 2021, Wiley-VCH.

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