• Journal of Semiconductors
  • Vol. 42, Issue 3, 030203 (2021)
Wensi Cai1, Zhigang Zang1, and Liming Ding2
Author Affiliations
  • 1Key Laboratory of Optoelectronic Technology & Systems (MoE), Chongqing University, Chongqing 400044, China
  • 2Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing 100190, China
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    DOI: 10.1088/1674-4926/42/3/030203 Cite this Article
    Wensi Cai, Zhigang Zang, Liming Ding. Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. Journal of Semiconductors, 2021, 42(3): 030203 Copy Citation Text show less
    (Color online) (a) Transfer characteristics of IGZO TFTs treated with different SAMs under positive bias stress. Insets show the chemical structures of SAM molecules. Reproduced with permission[11], Copyright 2021, IOP Publishing. (b) Transfer characteristics of IGZO TFTs with and without OTS treatment. (c) OTS-treated IGZO TFTs before and after being stored in air for a year. Reproduced with permission[8], Copyright 2021, American Chemical Society.
    Fig. 1. (Color online) (a) Transfer characteristics of IGZO TFTs treated with different SAMs under positive bias stress. Insets show the chemical structures of SAM molecules. Reproduced with permission[11], Copyright 2021, IOP Publishing. (b) Transfer characteristics of IGZO TFTs with and without OTS treatment. (c) OTS-treated IGZO TFTs before and after being stored in air for a year. Reproduced with permission[8], Copyright 2021, American Chemical Society.
    (Color online) (a) Chemical structure of ODPA and contact angles of AlOx, SAM-treated AlOx before and after annealing. (b) Transfer characteristics of ZnO TFTs. Reproduced with permission[13], Copyright 2021, Wiley-VCH. (c) Transfer characteristics of IGZO TFTs with bare AlxOy and OTS-treated AlxOy as gate dielectrics. (d) Transfer characteristics of IGZO TFTs with bare HfOx and OTS-treated HfOx under positive bias stress. Reproduced with permission[14], Copyright 2021, Wiley-VCH.
    Fig. 2. (Color online) (a) Chemical structure of ODPA and contact angles of AlOx, SAM-treated AlOx before and after annealing. (b) Transfer characteristics of ZnO TFTs. Reproduced with permission[13], Copyright 2021, Wiley-VCH. (c) Transfer characteristics of IGZO TFTs with bare AlxOy and OTS-treated AlxOy as gate dielectrics. (d) Transfer characteristics of IGZO TFTs with bare HfOx and OTS-treated HfOx under positive bias stress. Reproduced with permission[14], Copyright 2021, Wiley-VCH.
    Wensi Cai, Zhigang Zang, Liming Ding. Self-assembled monolayers enhance the performance of oxide thin-film transistors[J]. Journal of Semiconductors, 2021, 42(3): 030203
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