Fig. 1. (Color online) (a) Transfer characteristics of IGZO TFTs treated with different SAMs under positive bias stress. Insets show the chemical structures of SAM molecules. Reproduced with permission^[11], Copyright 2021, IOP Publishing. (b) Transfer characteristics of IGZO TFTs with and without OTS treatment. (c) OTS-treated IGZO TFTs before and after being stored in air for a year. Reproduced with permission^[8], Copyright 2021, American Chemical Society.

Fig. 2. (Color online) (a) Chemical structure of ODPA and contact angles of AlO_x, SAM-treated AlO_x before and after annealing. (b) Transfer characteristics of ZnO TFTs. Reproduced with permission^[13], Copyright 2021, Wiley-VCH. (c) Transfer characteristics of IGZO TFTs with bare Al_xO_y and OTS-treated Al_xO_y as gate dielectrics. (d) Transfer characteristics of IGZO TFTs with bare HfO_x and OTS-treated HfO_x under positive bias stress. Reproduced with permission^[14], Copyright 2021, Wiley-VCH.