AuGeNi-InP Laser Assisted Aalloying Using CW CO2 Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 22 >Issue 10 >Page 1263 > Article

Acta Optica Sinica
Vol. 22, Issue 10, 1263 (2002)

AuGeNi-InP Laser Assisted Aalloying Using CW CO₂ Laser

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. AuGeNi-InP Laser Assisted Aalloying Using CW CO₂ Laser[J]. Acta Optica Sinica, 2002, 22(10): 1263 Copy Citation Text

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References

[2] Celler G K, Poate J M, Kimerling L C. Spatially controlled crystal regrowth of ion-implanted silicon by laser irradiation. Appl. Phys. Lett., 1978, 32(8):464～466

[3] Kular S S, Sealy B J, Stephens K G et al.. Pulsed laser annealing of zinc implanted GaAs. Electron. Lett., 1978, 14(4):85～87

[4] Sealy B J, Kular S S, Stephens K G et al.. Electrical properties of laser-annealed donor-implanted GaAs. Electron. Lett., 1978, 14(22):720～721

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