AuGeNi-InP Laser Assisted Aalloying Using CW CO2 Laser

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 22 >Issue 10 >Page 1263 > Article

Acta Optica Sinica
Vol. 22, Issue 10, 1263 (2002)

AuGeNi-InP Laser Assisted Aalloying Using CW CO₂ Laser

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. AuGeNi-InP Laser Assisted Aalloying Using CW CO₂ Laser[J]. Acta Optica Sinica, 2002, 22(10): 1263 Copy Citation Text

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Abstract

AuGeNi InP alloy on InP chip and good ohmic contact have been fabricated by means of laser assisted alloying. The minimum contact resistance between the two surfaces of InP substrate is as low as 5.8 Ω. According to the experimental result, influence of some important processing parameters (as alloying time, alloying temperature, the thickness of film, et al.) on ohmic contact are discussed.

Keywords

ohmic contact semiconductor compound laser assisted alloying

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