• Acta Optica Sinica
  • Vol. 39, Issue 5, 0523003 (2019)
Wenjing Zhang1, Qin Zhang1、*, Liang Yang2, Ying Jiang1, Chun Chang1, Xiao Jin1, Feng Li1, Yan Huang1, and Qinghua Li1、*
Author Affiliations
  • 1 School of Measuring and Optical Engineering, Nanchang Hangkong University, Nanchang, Jiangxi 330063, China
  • 2 Fujian Key Laboratory of Functional Materials and Applications, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
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    DOI: 10.3788/AOS201939.0523003 Cite this Article Set citation alerts
    Wenjing Zhang, Qin Zhang, Liang Yang, Ying Jiang, Chun Chang, Xiao Jin, Feng Li, Yan Huang, Qinghua Li. Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer[J]. Acta Optica Sinica, 2019, 39(5): 0523003 Copy Citation Text show less
    Green CdSe/ZnS nuclear shell quantum dots. (a) TEM image; (b) high-resolution TEM image; (c) XRD pattern; (d) atomic absorption and photoluminescence (PL) spectra
    Fig. 1. Green CdSe/ZnS nuclear shell quantum dots. (a) TEM image; (b) high-resolution TEM image; (c) XRD pattern; (d) atomic absorption and photoluminescence (PL) spectra
    Device based on Green CdSe/ZnS nuclear shell quantum dots. (a) Structural diagram; (b) energy level diagram
    Fig. 2. Device based on Green CdSe/ZnS nuclear shell quantum dots. (a) Structural diagram; (b) energy level diagram
    AFM images of Spiro-OMeTAD buffer layers with different amounts of spin coating. (a) 20 μL; (b) 40 μL; (c) 60 μL; (d) 80 μL; (e) 100 μL
    Fig. 3. AFM images of Spiro-OMeTAD buffer layers with different amounts of spin coating. (a) 20 μL; (b) 40 μL; (c) 60 μL; (d) 80 μL; (e) 100 μL
    Performance comparison of traditional devices and those added with Spiro-OMeTAD electronic buffer layer. (a) External quantum efficiency and current efficiency versus voltage; (b) brightness versus voltage; (c) current density versus voltage
    Fig. 4. Performance comparison of traditional devices and those added with Spiro-OMeTAD electronic buffer layer. (a) External quantum efficiency and current efficiency versus voltage; (b) brightness versus voltage; (c) current density versus voltage
    Electroluminescence (EL) spectra. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer; (c) brightness of traditional device and that added with Spiro-OMeTAD electronic buffer layer versus time at constant current
    Fig. 5. Electroluminescence (EL) spectra. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer; (c) brightness of traditional device and that added with Spiro-OMeTAD electronic buffer layer versus time at constant current
    Schematics of electron transport. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer
    Fig. 6. Schematics of electron transport. (a) Traditional device; (b) device added with Spiro-OMeTAD buffer layer
    Volume of Spiro-OMeTAD /μLEQE /%Current efficiency /(cd·A-1)Luminance /(cd·m-2)Current density /(mA·cm-2)
    206.437.2630800.0888.00
    406.707.6737100.0933.00
    608.558.4740677.51022.50
    8011.8713.2053055.0790.00
    10010.6511.6149405.0734.50
    Table 1. Performances of device prepared with different amounts of Spiro-OMeTAD spin coating
    Wenjing Zhang, Qin Zhang, Liang Yang, Ying Jiang, Chun Chang, Xiao Jin, Feng Li, Yan Huang, Qinghua Li. Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer[J]. Acta Optica Sinica, 2019, 39(5): 0523003
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