• Acta Optica Sinica
  • Vol. 39, Issue 5, 0523003 (2019)
Wenjing Zhang1, Qin Zhang1、*, Liang Yang2, Ying Jiang1, Chun Chang1, Xiao Jin1, Feng Li1, Yan Huang1, and Qinghua Li1、*
Author Affiliations
  • 1 School of Measuring and Optical Engineering, Nanchang Hangkong University, Nanchang, Jiangxi 330063, China
  • 2 Fujian Key Laboratory of Functional Materials and Applications, School of Materials Science and Engineering, Xiamen University of Technology, Xiamen, Fujian 361024, China
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    DOI: 10.3788/AOS201939.0523003 Cite this Article Set citation alerts
    Wenjing Zhang, Qin Zhang, Liang Yang, Ying Jiang, Chun Chang, Xiao Jin, Feng Li, Yan Huang, Qinghua Li. Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer[J]. Acta Optica Sinica, 2019, 39(5): 0523003 Copy Citation Text show less

    Abstract

    A charge imbalance often occurs in quantum dot light-emitting diodes (QLEDs) owing to the difference in migration rate between the hole transport layer (HTL) and the electron transport layer. In this study, we inserted a Spiro-OMeTAD thin film, an organic polymer with a high lowest unoccupied molecular orbital energy level, between the HTL and quantum dot emission layer to block the transmission of excess electrons from the quantum dot luminescence layer to the HTL, which promotes the charge balance of the device, and thus a highly efficient new green QLED is fabricated. The results show that the new green QLED exhibits distinct improvements over the traditional devices, with an 87% improvement in external quantum efficiency up to 11.87%, and a 106% increase in brightness up to 53055 cd/m 2. This proves that blocking the transmission of excess electrons can significantly solve the charge imbalance problem in QLEDs.
    Wenjing Zhang, Qin Zhang, Liang Yang, Ying Jiang, Chun Chang, Xiao Jin, Feng Li, Yan Huang, Qinghua Li. Improved Charge Balance of Quantum Dot Light-Emitting Diodes via Spiro-OMeTAD Electron Blocking Layer[J]. Acta Optica Sinica, 2019, 39(5): 0523003
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