[1] D. Prather, S. Shi, J. Murakowski, G. Schneider, A. Sharkawy, C. Chen, B. Miao. Silicon-Based Photonic Crystal Structures: From Design to Realization, 47-93(2008).

[2] D. Ahn, C.-Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. Kimerling, J. Michel, J. Chen, F. Kärtner. High performance, waveguide integrated Ge photodetectors. Opt. Express, 15, 3916-3921(2007).

[3] D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. Cunningham, A. Krishnamoorthy, M. Asghari Khiavi. High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide. Appl. Phys. Lett., 95, 261105(2009).

[4] A. Beling, J. C. Campbell. InP-based high-speed photodetectors. J. Lightwave Technol., 27, 343-355(2009).

[5] E. Peiner, A. Guttzeit, H.-H. Wehmann. The effect of threading dislocations on optical absorption and electron scattering in strongly mismatched heteroepitaxial III–V compound semiconductors on silicon. J. Phys. Condens. Matter, 14, 13195-13201(2002).

[6] Y.-T. Sun, K. Baskar, S. Lourdudoss. Thermal strain in indium phosphide on silicon obtained by epitaxial lateral overgrowth. J. Appl. Phys., 94, 2746-2748(2003).

[7] Z. Sheng, L. Liu, J. Brouckaert, S. He, D. Thourhout. InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides. Opt. Express, 18, 1756-1761(2010).

[8] L. Pavesi, L. Negro, C. Mazzoleni, G. Franzo, F. Priolo. Optical gain in Si nanocrystals. Nature, 408, 440-444(2000).

[9] J. Michel, J. Liu, L. Kimerling. High-performance Ge-on-Si photodetectors. Nat. Photonics, 4, 527-534(2010).

[10] H. Meng, A. Atabaki, J. S. Orcutt, R. J. Ram. Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength. Opt. Express, 23, 32643-32653(2015).

[11] T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, M. Notomi. All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip. Appl. Phys. Lett., 96, 101103(2010).

[12] T. K. Liang, H. K. Tsang, I. E. Day, J. Drake, A. P. Knights, M. Asghari. Silicon waveguide two-photon absorption detector at 1.5  mu m wavelength for autocorrelation measurements. Appl. Phys. Lett., 81, 1323-1325(2002).

[13] H. Chen, A. Poon. Two-photon absorption photocurrent in p-i-n diode embedded silicon microdisk resonators. Appl. Phys. Lett., 96, 191106(2010).

[14] M. Tanzid, A. Ahmadivand, R. Zhang, B. Cerjan, A. Sobhani, S. Yazdi, P. Nordlander, N. Halas. Combining plasmonic hot carrier generation with free carrier absorption for high-performance near-infrared silicon-based photodetection. ACS Photon., 5, 3472-3477(2018).

[15] B. Desiatov, I. Goykhman, J. Shappir, U. Levy. Defect-assisted sub-bandgap avalanche photodetection in interleaved carrier-depletion silicon waveguide for telecom band. Appl. Phys. Lett., 104, 091105(2014).

[16] D. A. Willis, V. Grosu. Microdroplet deposition by laser-induced forward transfer. Appl. Phys. Lett., 86, 244103(2005).

[17] J. Doylend, P. Jessop, A. Knights. Silicon photonic resonator-enhanced defect-mediated photodiode for sub-bandgap detection. Opt. Express, 18, 14671-14678(2010).

[18] H. W. Du, J. Yang, Y. H. Li, F. Xu, J. Xu, Z. Q. Ma. Preparation of ITO/SiOx/n-Si solar cells with non-decline potential field and hole tunneling by magnetron sputtering. Appl. Phys. Lett., 106, 093508(2015).

[19] D. H. Shin, S. Kim, J. M. Kim, C. W. Jang, J. H. Kim, K. W. Lee, J. Kim, S. D. Oh, D. H. Lee, S. S. Kang, C. O. Kim, S. H. Choi, K. J. Kim. Graphene/Si-quantum-dot heterojunction diodes showing high photosensitivity compatible with quantum confinement effect. Adv. Mater., 27, 2614-2620(2015).

[20] S. Y. Zhu, M. B. Yu, G. Q. Lo, D. L. Kwong. Near-infrared waveguide-based nickel silicide Schottky-barrier photodetector for optical communications. Appl. Phys. Lett., 92, 081103(2008).

[21] M. Casalino, G. Coppola, M. Iodice, I. Rendina, L. Sirleto. Critically coupled silicon Fabry-Perot photodetectors based on the internal photoemission effect at 1550  nm. Opt. Express, 20, 12599-12609(2012).

[22] M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffre, I. Rendina, G. Coppola. Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide. Appl. Phys. Lett., 96, 241112(2010).

[23] S. Sze. Physics of Semiconductor Devices(1981).

[24] W. Diels, M. Steyaert, F. Tavernier. Schottky photodiodes in bulk CMOS for high-speed 1310/1550  nm optical receivers. IEEE J. Sel. Top. Quantum Electron., 24, 1-8(2018).

[25] Z. Huang, Y. Mao, G. Lin, X. Yi, A. Chang, C. Li, S. Chen, W. Huang, J. Wang. Low dark current broadband 360–1650  nm ITO/Ag/n-Si Schottky photodetectors. Opt. Express, 26, 5827-5834(2018).

[26] G.-J. Horng, C.-Y. Chang, C. Ho, C.-Y. Lee, T. Y. Huang. The effects of growth temperature on the microstructure and electrical barrier height in PtSi/p-Si(100) Schottky barrier detector. Thin Solid Films, 374, 80-84(2000).

[27] P. Srivastava, M. Shin, K.-R. Lee, H. Mizuseki, S. Kim. The Schottky barrier modulation at PtSi/Si interface by strain and structural deformation. AIP Adv., 5, 087109(2015).

[28] R. T. Tung. Recent advances in Schottky barrier concepts. Mater. Sci. Eng. R, 35, 1-138(2001).

[29] M. Patel, H. S. Kim, H. H. Park, J. Kim. Silver nanowires-templated metal oxide for broadband Schottky photodetector. Appl. Phys. Lett., 108, 141904(2016).

[30] J. Yun, M. Kumar, Y. Park, H.-S. Kim, J. Kim. High performing ITO/Ge heterojunction photodetector for broad wavelength detection. J. Mater. Sci. Mater. Electron., 26, 6099-6106(2015).

[31] H.-S. Kim, M. D. Kumar, M. Patel, J. Kim. High-performing ITO/CuO/n-Si photodetector with ultrafast photoresponse. Sens. Actuators A, 252, 35-41(2016).

[32] I. Goykhman, B. Desiatov, J. Khurgin, J. Shappir, U. Levy. Locally oxidized silicon surface-plasmon Schottky detector for telecom regime. Nano Lett., 11, 2219-2224(2011).

[33] I. Goykhman, U. Sassi, B. Desiatov, N. Mazurski, S. Milana, D. Fazio, A. Eiden, J. Khurgin, J. Shappir, U. Levy, A. Ferrari. On-chip integrated, silicon-graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain. Nano Lett., 16, 3005-3013(2016).

[34] M. Alavirad, A. Olivieri, L. Roy, P. Berini. High-responsivity sub-bandgap hot-hole plasmonic Schottky detectors. Opt. Express, 24, 22544-22554(2016).

[35] X. Xu, Z. Liu, Y. Wang. Step-directed deposition of Au nanostructures by electron beam evaporation. J. Rare Earth, 22, 141-144(2004).

[36] S. K. Cheung, N. W. Cheung. Extraction of Schottky diode parameters from forward current‐voltage characteristics. Appl. Phys. Lett., 49, 85-87(1986).

[37] W. Mönch. On metal-semiconductor surface barriers. Surf. Sci., 21, 443-446(1970).

[38] Z. Huang, Y. Mao, A. Chang, H. Hong, C. Li, S. Chen, W. Huang, J. Wang. Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800–1650  nm detection. Appl. Phys. Express, 11, 102203(2018).

[39] M. Amirmazlaghani, F. Raissi, O. Habibpour, J. Vukusic, J. Stake. Graphene-Si Schottky IR detector. IEEE J. Quantum Electron., 49, 589-594(2013).

[40] B. Desiatov, I. Goykhman, N. Mazurski, J. Shappir, J. B. Khurgin, U. Levy. Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime. Optica, 2, 335-338(2015).

[41] S. Roy, K. Midya, S. Duttagupta, D. Ramakrishnan. Nano-scale NiSi and n-type silicon based Schottky barrier diode as a near infra-red detector for room temperature operation. J. Appl. Phys., 116, 124507(2014).

[42] Y. Pei, R. Pei, L. Xiaoci, Y. Wang, L. Liu, H. Chen, J. Liang. CdS-nanowires flexible photo-detector with Ag-nanowires electrode based on non-transfer process. Sci. Rep., 6, 21551(2016).