The minimum standard model (MSM) structured photodetectors includes photoconductive type and Schottky type. Schottky GaN MSM photodetectors have been made due to its excellent properties of low dark current,high speed,large responsivity,small parasitic capacitance. MSM structured electrodes were fabricated by using conventional ultraviolet (UV) lithography and wet etching,and Au were used as the metal electrodes. The dark current of the fabricated Schottky GaN UV photodetectors was 3.5 nA at 1 V bias voltage. The maximum responsivity of the device was 0.12 A/W at 362 nm under 1 V bias voltage. The rise time of the device was no more than 10 ns,and the fall time was 210 ns. The influencing factor of the response time has been investigated deeply.