Simulation Model Based on Equivalent Layer Method for Defective Mask Multilayer in Extremeultra violet Lithography

Liu Xiaolei; Li Sikun; Wang Xiangzhao

doi:10.3788/aos201535.0622005

[1] R Peeters, S Lok, E Alphen, et al.. ASML′s NXE platform performance and volume introduction[C]. SPIE, 2013, 8679: 86791F.

[2] R Peeters, S Lok, J Mallman, et al.. EUV lithography: NXE platform performance overview[C]. SPIE, 2014, 9048: 90481J.

[3] Du Yuchan, Li Hailiang, Shi Lina, et al.. Integrated development of extreme ultraviolet lithography mask at 32 nm node[J]. Acta Optica Sinica, 2013, 33(10): 1034002.

[4] A Erdmann, P Evanschitzky, T Bret, et al.. Analysis of EUV mask multilayer defect printing characteristics[C]. SPIE, 2012, 8322: 83220E.

[5] C H Clifford, A R Neureuther. Smoothing based model for images of isolated buried EUV multilayer defects[C]. SPIE, 2008, 6921: 692119.

[6] T Pistor, Y Deng, A Neureuther. Extreme ultraviolet mask defect simulation: low-profile defects[J]. J Vac Sci Technol B, 2000, 18(6): 2926-2929.

[7] P Evanschitzky, A Erdmann. Fast near field simulation of optical and EUV masks using the waveguide method[C]. SPIE, 2007, 6533: 65330Y.

[8] C H Clifford, A R Neureuther. Fast simulation of buried EUV mask defect interaction with absorber features[C]. SPIE, 2007, 6517: 65170A.

[9] E M Gullikson, C Cerjan, D G Stearns, et al.. Practical approach for modeling extreme ultraviolet lithography mask defects[J]. J Vac Sci Technol B, 2002, 20(1): 81-86.

[10] C Sambale, T Schmoeller, A Erdmann, et al.. Rigorous simulation of defective EUV multilayer masks[C]. SPIE, 2003, 5256: 1239-1248.

[11] M C Lam, A R Neureuther. Fast simulation methods for defective EUV mask blank inspection[C]. SPIE, 2004, 5567: 741-750.

[12] Liu Xiaolei, Li Sikun, Wang Xiangzhao. Simplified model for defective multilayer diffraction spectrum simulation in extreme ultraviolet lithography[J]. Acta Optica Sinica, 2014, 34(9): 0905002.

[13] C H Clifford. Simulation and Compensation Methods for EUV Lithography Masks with Buried Defects[D]. Berkeley: University of California, 2010: 19-20.

[14] A Erdmann, P Evanschitzky, T Bret, et al.. Modeling strategies for EUV mask multilayer defect dispositioning and repair[C]. SPIE, 2013, 8679: 86790Y.

[15] J M Vigoureux, F Bada. Critical size of multi-resonant optical tunnel structures. Application to nonradiative effects[J]. Opt Commun, 1993, 101(5-6): 297-302.

[16] T Hashimoto, H Yamanashi, M Sugawara, et al.. Lithographic characterization of EUVL mask blank defects[C]. SPIE, 2004, 5374: 740-750.

[17] D G Stearns, P B Mirkarimi, E Spiller. Localized defects in multilayer coatings[J]. Thin Solid Films, 2004, 446(1): 37-49.

[18] P Naulleau, K A Goldberg, E H Anderson, et al.. Lithographic characterization of the printability of programmed extreme ultraviolet substrate defects[J]. J Vac Sci Technol B, 2003, 21(4): 1286-1290.

[19] E M Gullikson, E Tejnil, T Liang, et al.. EUVL defect printability at the 32 nm Node[C]. SPIE, 2004, 5374: 791-796.

[20] M Ito, T Ogawa, K Otaki, et al.. Simulation of multilayer defects in extreme ultraviolet masks[J]. Jpn J Appl Phys, 2001, 40(4R): 2549-2553.

[21] T Fühner, T Schnattinger, G Ardelean, et al.. Dr.LiTHO – a development and research lithography simulator[C]. SPIE, 2007, 6520: 65203F.

[22] Cao Yuting, Wang Xiangzhao, Qiu Zicheng, et al.. Simplified model for mask diffraction in extreme-ultraviolet projection lithography[J]. Acta Optica Sinica, 2011, 31(4): 0405001.

[23] Cao Yuting, Wang Xiangzhao, Bu Yang, et al.. Analysis of mask shadowing effects in extreme-ultraviolet lithography[J]. Acta Optica Sinica, 2012, 32(8): 0805001.

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