• Journal of Infrared and Millimeter Waves
  • Vol. 42, Issue 3, 292 (2023)
Song GENG, Jin YANG, Shu-Jie LI, Gang QIN, Li-Hua LI, Jun ZHAO*, Yan-Hui LI, Jin-Cheng KONG, Peng ZHAO, Da-Fan ZUO, Yan-Bo HU, Yan LIANG, and Yang REN
Author Affiliations
  • Kunming Institute of Physics, Kunming 650223, China
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    DOI: 10.11972/j.issn.1001-9014.2023.03.002 Cite this Article
    Song GENG, Jin YANG, Shu-Jie LI, Gang QIN, Li-Hua LI, Jun ZHAO, Yan-Hui LI, Jin-Cheng KONG, Peng ZHAO, Da-Fan ZUO, Yan-Bo HU, Yan LIANG, Yang REN. Study of MW/LW dual-band IRFPAs detector assemblies[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 292 Copy Citation Text show less
    Relationship of medium wave photon absorptivity and absorption layer thickness
    Fig. 1. Relationship of medium wave photon absorptivity and absorption layer thickness
    Relationship of long wave quantum efficiency and absorption thickness
    Fig. 2. Relationship of long wave quantum efficiency and absorption thickness
    Cross-section schematic of MW/LW two-band HgCdTe infrared detector
    Fig. 3. Cross-section schematic of MW/LW two-band HgCdTe infrared detector
    Schematic of the input stage of the dual-band ROIC
    Fig. 4. Schematic of the input stage of the dual-band ROIC
    Timing schedule of integration and readout
    Fig. 5. Timing schedule of integration and readout
    SEM characterization of MW/LW dual-band HgCdTe grown by MBE
    Fig. 6. SEM characterization of MW/LW dual-band HgCdTe grown by MBE
    Surface morphology of MW/LW dual-band HgCdTe film
    Fig. 7. Surface morphology of MW/LW dual-band HgCdTe film
    [in Chinese]
    Fig. 8. [in Chinese]
    XRD characterization results of MW/LW dual-band HgCdTe film
    Fig. 9. XRD characterization results of MW/LW dual-band HgCdTe film
    The ICP etching effect of the mesa-hole (a) high etching temperature,(b) the ratio of process gas is out of balance,(c)high etching pressure,(d)low etching power,(e)after improvement of the etching process, (f)cross-section schematic of the mesa-hole
    Fig. 10. The ICP etching effect of the mesa-hole (a) high etching temperature,(b) the ratio of process gas is out of balance,(c)high etching pressure,(d)low etching power,(e)after improvement of the etching process, (f)cross-section schematic of the mesa-hole
    Sidewall passivation effect of the mesa-hole
    Fig. 11. Sidewall passivation effect of the mesa-hole
    The relative spectral response between MW and LW
    Fig. 12. The relative spectral response between MW and LW
    Test results of the MW/LW dual-bands HgCdTe FPA (a) response signal map of MW,(b) response signal map of LW
    Fig. 13. Test results of the MW/LW dual-bands HgCdTe FPA (a) response signal map of MW,(b) response signal map of LW
    项目技术指标
    阵列规模640×512
    输入级电路双DI
    动态范围/dB≥75 dB
    最大读出速率/MHz≥10
    工作模式ITR
    电荷存储能力/Me-47
    Table 1. The performance of the dual-band ROIC chip under 77 K
    参数

    平均峰值探测率

    /(cm·Hz1/2/W)

    响应率非均匀性NETD/mK有效像元率
    长波6.52×10107.25%32.898.19%
    中波3.31×10116.42%17.799.46%
    Table 2. Test results of the MW/LW dual-band FPA
    Song GENG, Jin YANG, Shu-Jie LI, Gang QIN, Li-Hua LI, Jun ZHAO, Yan-Hui LI, Jin-Cheng KONG, Peng ZHAO, Da-Fan ZUO, Yan-Bo HU, Yan LIANG, Yang REN. Study of MW/LW dual-band IRFPAs detector assemblies[J]. Journal of Infrared and Millimeter Waves, 2023, 42(3): 292
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