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Journals >Laser & Optoelectronics Progress >Volume 59 >Issue 19 >Page 1931002 > Article

Laser & Optoelectronics Progress
Vol. 59, Issue 19, 1931002 (2022)

Study on Paper-Based Flexible Thin-Film Transistor Based on Indium Gallium Zinc Oxide

Yunlong Sun, Ting Yang, Kai Chen, and Hongke Zhang^*

Author Affiliations

Jiangxi Copper Technology Research Institute Co., Ltd., Nanchang 330096, Jiangxi, China

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DOI: 10.3788/LOP202259.1931002 Cite this Article Set citation alerts

Yunlong Sun, Ting Yang, Kai Chen, Hongke Zhang. Study on Paper-Based Flexible Thin-Film Transistor Based on Indium Gallium Zinc Oxide[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931002 Copy Citation Text

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References

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[2] Rembert T, Battaglia C, Anders A et al. Room temperature oxide deposition approach to fully transparent, all-oxide thin-film transistors[J]. Advanced Materials, 27, 6090-6095(2015).

[3] Miura K, Ueda T, Nakano S et al. 4.1: low-temperature-processed IGZO TFTs for flexible AMOLED with integrated gate driver circuits[J]. SID Symposium Digest of Technical Papers, 42, 21-24(2011).

[4] Munzenrieder N, Cherenack K H, Troster G. The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs[J]. IEEE Transactions on Electron Devices, 58, 2041-2048(2011).

[5] Nomura K, Ohta H, Takagi A et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors[J]. Nature, 432, 488-492(2004).

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[8] Nogi M, Iwamoto S, Nakagaito A N et al. Optically transparent nanofiber paper[J]. Advanced Materials, 21, 1595-1598(2009).

[9] Klemm D, Heublein B, Fink H P et al. Cellulose: fascinating biopolymer and sustainable raw material[J]. Angewandte Chemie (International Ed. in English), 44, 3358-3393(2005).

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[12] Zheng G Y, Cui Y, Karabulut E et al. Nanostructured paper for flexible energy and electronic devices[J]. MRS Bulletin, 38, 320-325(2013).

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[14] Liu X Z, Ning H L, Chen J Q et al. High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2 active layer[J]. Applied Physics Letters, 108, 112106(2016).

[15] Ahn C H, Senthil K, Cho H K et al. Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors[J]. Scientific Reports, 3, 2737(2013).

[16] Nayak P K, Wang Z W, Alshareef H N. Indium-free fully transparent electronics deposited entirely by atomic layer deposition[J]. Advanced Materials, 28, 7736-7744(2016).

[17] Zeng Y, Ning H L, Zheng Z K et al. Island-like AZO/Al2O3 bilayer channel structure for thin film transistors[J]. Advanced Materials Interfaces, 4, 1700063(2017).

[18] Zheng Z K, Zeng Y, Yao R H et al. All-sputtered, flexible, bottom-gate IGZO/Al2O3 bi-layer thin film transistors on PEN fabricated by a fully room temperature process[J]. Journal of Materials Chemistry C, 5, 7043-7050(2017).

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Yunlong Sun, Ting Yang, Kai Chen, Hongke Zhang. Study on Paper-Based Flexible Thin-Film Transistor Based on Indium Gallium Zinc Oxide[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931002

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