Yunlong Sun, Ting Yang, Kai Chen, Hongke Zhang. Study on Paper-Based Flexible Thin-Film Transistor Based on Indium Gallium Zinc Oxide[J]. Laser & Optoelectronics Progress, 2022, 59(19): 1931002
- Laser & Optoelectronics Progress
- Vol. 59, Issue 19, 1931002 (2022)
Fig. 1. Diagram of flexible TFT fabricated on nano-paper substrate. (a) Schematic illustration; (b) digital photo
Fig. 2. Microphotographs of TFT device.(a) Optical microscope image of TFT device with a smooth channel; (b) STEM image of TFT device; (c) EDS mapping of TFT device; (d) AFM images of substrate, buffer layer, insulation layer, and active layer of TFT device
Fig. 3. Channel layer of IGZO.(a) HRTEM image of IGZO channel layer; (b) EDS mapping of nano-paper TFT; (c) element distribution map of Ga、In, and Zn; (d) electron diffraction pattern of IGZO channel layer; (e) EDS line scan of IGZO layer
Fig. 4. Electron transport mechanism in channel layer. (a) Plot of (αhν)2 versus hν for Al2O3 and IGZO; (b) schematic of electron transport between Al2O3 and IGZO
Fig. 5. Electrical properties of paper-based TFT. (a) Output and (b) transfer characteristics of nano-paper TFT; (c) I-V characteristics of MIM capacitor with Al2O3 insulator on nano-paper substrate; (d) XPS O1s core spectra of IGZO/Al2O3 layer
Fig. 6. Stable performance of paper-based TFT. (a) PBS and (b) NBS results; (c) Von shift of nano-paper TFT
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Table 1. Electrical properties of nano-paper TFT
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Table 2. Von drift values under PBS and NBS
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