• Opto-Electronic Engineering
  • Vol. 51, Issue 6, 240116-1 (2024)
Rui Yang1, Sishuo Yang1, and Lingxuan Qian1,2,*
Author Affiliations
  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China
  • 2Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, Chongqing 401332, China
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    DOI: 10.12086/oee.2024.240116 Cite this Article
    Rui Yang, Sishuo Yang, Lingxuan Qian. Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors[J]. Opto-Electronic Engineering, 2024, 51(6): 240116-1 Copy Citation Text show less
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    Rui Yang, Sishuo Yang, Lingxuan Qian. Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors[J]. Opto-Electronic Engineering, 2024, 51(6): 240116-1
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