• Opto-Electronic Engineering
  • Vol. 51, Issue 6, 240116-1 (2024)
Rui Yang1, Sishuo Yang1, and Lingxuan Qian1,2,*
Author Affiliations
  • 1State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China
  • 2Chongqing Institute of Microelectronics Industry Technology, University of Electronic Science and Technology of China, Chongqing 401332, China
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    DOI: 10.12086/oee.2024.240116 Cite this Article
    Rui Yang, Sishuo Yang, Lingxuan Qian. Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors[J]. Opto-Electronic Engineering, 2024, 51(6): 240116-1 Copy Citation Text show less
    The schematic diagram of the a-Ga2O3 MSM SBPD (left) and its microscopic image (right)
    Fig. 1. The schematic diagram of the a-Ga2O3 MSM SBPD (left) and its microscopic image (right)
    (a) GIXRD spectra of the substrate and a-Ga2O3 film deposited at pure Ar; (b) XPS survey of a-Ga2O3 film deposited at pure Ar
    Fig. 2. (a) GIXRD spectra of the substrate and a-Ga2O3 film deposited at pure Ar; (b) XPS survey of a-Ga2O3 film deposited at pure Ar
    Optical transmittance spectra of a-Ga2O3 films deposited at different oxygen partial pressures and (αhν)2-hν plots(inset)
    Fig. 3. Optical transmittance spectra of a-Ga2O3 films deposited at different oxygen partial pressures and (αhν)2- plots(inset)
    XPS O 1s core level and fitting results of a-Ga2O3 films under different oxygen partial pressures. (a) O 1s core level of a-Ga2O3 films with different oxygen partial pressures; Fitting results of O 1s core level of (b) pure Ar, (c) 3% oxygen partial pressure, and(d) 7% oxygen partial pressure
    Fig. 4. XPS O 1s core level and fitting results of a-Ga2O3 films under different oxygen partial pressures. (a) O 1s core level of a-Ga2O3 films with different oxygen partial pressures; Fitting results of O 1s core level of (b) pure Ar, (c) 3% oxygen partial pressure, and(d) 7% oxygen partial pressure
    The current-voltage(I-V) of the a-Ga2O3 MSM SBPDs under different oxygen partial pressures. (a) The dark current characteristics and the responsivity under three conditions(inset); (b) The photocurrent characteristics(254 nm, 80 μW/cm2)
    Fig. 5. The current-voltage(I-V) of the a-Ga2O3 MSM SBPDs under different oxygen partial pressures. (a) The dark current characteristics and the responsivity under three conditions(inset); (b) The photocurrent characteristics(254 nm, 80 μW/cm2)
    Transient responses of a-Ga2O3 MSM SBPDs under different oxygen partial pressures. (a) Transient response for multicycles; (b) Normalized transient response; Experimental and fitted curves of the rise and decay processes for the device with (c) 3% oxygen partial pressure and (d) 7% oxygen partial pressure
    Fig. 6. Transient responses of a-Ga2O3 MSM SBPDs under different oxygen partial pressures. (a) Transient response for multicycles; (b) Normalized transient response; Experimental and fitted curves of the rise and decay processes for the device with (c) 3% oxygen partial pressure and (d) 7% oxygen partial pressure
    Rui Yang, Sishuo Yang, Lingxuan Qian. Effect of oxygen partial pressure on amorphous Ga2O3-based solar-blind ultraviolet photodetectors[J]. Opto-Electronic Engineering, 2024, 51(6): 240116-1
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