The effects of molecular beam epitaxy growth parameters on the properties of high indium InGaAs materials have been investigated in this paper. The growth temperature, V/III ratio and arsenic dimer of In_0.74Ga_0.26As materials were investigated and adjusted to optimize the peak intensity of the photo luminescence and X-ray diffraction measurements, as well as background carrier concentration and mobility. Results show that moderate growth temperatures and V/III ratios are needed for the growth to improve the lattice quality, reduce the non-radiation recombination and decrease the background impurity concentration. The In_0.74Ga_0.26As materials grown using As₂ dimer show better material quality than those using As₄ dimer. For the material grown at 570 ℃, As₂ dimer and V/III ratio of 18, relatively strong photo luminescence and X-ray diffraction peak intensity have been achieved. At room temperature and 77 K, the background carrier concentrations were 6.3×10¹⁴ cm^-3 and 4.0×10¹⁴ cm^-3, while the mobilities were 13 400 cm²/Vs and 45 160 cm²/Vs, respectively.