Fig. 1. Typical structure of single absorption layer graphene detector based on localized filed enhancement. （a） Structural diagram of the graphene/PbS phototransistor; （b） Structural diagram of the graphene/perovskite phototransistor; （c） Structural diagram of the graphene/PDVF phototransistor; （d） Structural diagram of the graphene/MoTe₂ phototransistor

Fig. 2. Typical structure of graphene detector based on plasmon resonance filed enhancement. （a） Structural diagram of the graphene/gold nanoparticle photodetector^[13]; （b） Structural diagram of the graphene/Si QDs phototransistor^[14]

Fig. 3. Typical structures of graphene detectors enhanced by localized field with double absorption layers. （a） Structural diagram of the graphene/PTCDA/pentacene phototransistor^[15]; （b） Structural diagram of the graphene/PTAA/perovskite phototransistor^[16]; （c） Structural diagram of the graphene/C₆₀/pentacene phototransistor^[17]; （d） Response characteristics with different wavelengths^[18]

Fig. 4. Injection layer structure NIR graphene/organic phototransistor. （a） Structural diagram; （b） Pulse signals in calm state and after exercise^[21]

Fig. 5. Graphene heterojunction device with all-optically modulated photonic synapses function. (a) Device heterostructure diagram of the photonic synapse；(b) EPSC and IPSC of the device triggered by an optical pulse with wavelengths of 980 and 450 nm, respectively^[22]

Fig. 6. Visible and near infrared bidirectional light modulation. (a) Variation of photocurrent of visible Light under Near-infrared Modulation (5 nm C₆₀ device)^[23]； (b) Variation of photocurrent of visible Light under Near-infrared Modulation (11.2 nm C₆₀ device)^[23]; (c) Change of response speed of Near-infrared Light under visible light modulation (11.2 nm C₆₀ device)^[23]