• Microelectronics
  • Vol. 52, Issue 1, 104 (2022)
ZHANG Yingtao1, ZHU Zhihua1, FAN Xiaomei1, MAO Pan2, SONG Bin3, XU Qi’an3, WU Tiejiang3, CHEN Ruike1, WANG Yao1, and LIOU Juin Jei1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210186 Cite this Article
    ZHANG Yingtao, ZHU Zhihua, FAN Xiaomei, MAO Pan, SONG Bin, XU Qi’an, WU Tiejiang, CHEN Ruike, WANG Yao, LIOU Juin Jei. A Two-Stage-Protection SCR Device with Low Trigger Voltage[J]. Microelectronics, 2022, 52(1): 104 Copy Citation Text show less

    Abstract

    A two-stage protection SCR (TSPSCR) was proposed to reduce the trigger voltage. The P-ESD layer was implanted in the traditional LVTSCR, and an additional diode was added. Because of the higher doping concentration of P-ESD layer, the device could trigger the first-stage discharge path by avalanche breakdown earlier, thus opening the second-stage discharge path. The Sentaurus TCAD simulation results showed that compared with conventional SCRs, the device had a lower trigger voltage from 10.59 V to 4.12 V, a maintenance voltage of 1.25 V, and a leakage current of 7.85 nA at 1 V DC voltage. The optimized TSPSCR could be used in advanced circuits with 1 V operating voltage.
    ZHANG Yingtao, ZHU Zhihua, FAN Xiaomei, MAO Pan, SONG Bin, XU Qi’an, WU Tiejiang, CHEN Ruike, WANG Yao, LIOU Juin Jei. A Two-Stage-Protection SCR Device with Low Trigger Voltage[J]. Microelectronics, 2022, 52(1): 104
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