• Acta Optica Sinica
  • Vol. 42, Issue 10, 1022002 (2022)
Xinhua Yang1,2, Sikun Li1,2,*, Lufeng Liao1,2, Libin Zhang3..., Shuang Zhang3, Shengrui Zhang4, Weijie Shi4, Yayi Wei3 and Xiangzhao Wang1,2|Show fewer author(s)
Author Affiliations
  • 1Laboratory of Information Optics and Opto-Electronic Technology, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Integrated Circuit Advanced Process R & D Center, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;
  • 4DongFang JingYuan Electron Limited, Beijing 100176, China
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    DOI: 10.3788/AOS202242.1022002 Cite this Article Set citation alerts
    Xinhua Yang, Sikun Li, Lufeng Liao, Libin Zhang, Shuang Zhang, Shengrui Zhang, Weijie Shi, Yayi Wei, Xiangzhao Wang. Critical Pattern Selection Method for Full-Chip Source and Mask Optimization Based on Depth-First Search[J]. Acta Optica Sinica, 2022, 42(10): 1022002 Copy Citation Text show less
    Schematic diagram of frequency extraction
    Fig. 1. Schematic diagram of frequency extraction
    Schematic diagram of frequency grouping
    Fig. 2. Schematic diagram of frequency grouping
    Flow chart of critical pattern selection
    Fig. 3. Flow chart of critical pattern selection
    Selection results of proposed method. (a) Group A; (b) group B
    Fig. 4. Selection results of proposed method. (a) Group A; (b) group B
    Selection results of Tachyon Tflex method
    Fig. 5. Selection results of Tachyon Tflex method
    Optimized sources. (a) Group A of proposed method; (b) group B of proposed method; (c) Tachyon Tflex method
    Fig. 6. Optimized sources. (a) Group A of proposed method; (b) group B of proposed method; (c) Tachyon Tflex method
    Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group A and Tachyon Tflex)
    Fig. 7. Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group A and Tachyon Tflex)
    Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group B and Tachyon Tflex)
    Fig. 8. Process windows obtained after mask optimization. (a) Common process windows; (b) EL varying with DOF (group B and Tachyon Tflex)
    Selection results of proposed method
    Fig. 9. Selection results of proposed method
    Selection results of Tachyon Tflex method
    Fig. 10. Selection results of Tachyon Tflex method
    Optimized source obtained by Tachyon Tflex method
    Fig. 11. Optimized source obtained by Tachyon Tflex method
    Light sources after mask optimization for critical pattern groups B1--B8 obtained by proposed method
    Fig. 12. Light sources after mask optimization for critical pattern groups B1--B8 obtained by proposed method
    Comparison of public process windows and EL varying with DOF. (a) B1; (b) B2; (c) B3; (d) B4; (e) B5; (f) B6; (g) B7; (h) B8
    Fig. 13. Comparison of public process windows and EL varying with DOF. (a) B1; (b) B2; (c) B3; (d) B4; (e) B5; (f) B6; (g) B7; (h) B8
    Lithography toolNXT:1950i
    MaskBinary/dark field
    SourceFreeform
    Polarizationx,y
    Table 1. Simulation settings
    Critical patternDOF /nmMEEFILS
    Group A130.942.0923.24
    Group B131.322.1722.96
    Tachyon Tflex128.942.0923.28
    Table 2. Comparison of key indicators under 10%CD deviation and 5%EL variation
    Critical patternDOF /nmMEEFILS
    B1130.362.1123.21
    B2133.32.1423.23
    B3128.342.1023.21
    B4129.582.1623.42
    B5134.762.1123.16
    B6134.162.1123.23
    B7133.982.1023.22
    B8133.162.1123.13
    Pattern obtained byTachyon Tflex129.662.0923.21
    Table 3. Comparison of key indicators under 5%EL and 10%CD deviation (graph periodicity is not considered)
    Xinhua Yang, Sikun Li, Lufeng Liao, Libin Zhang, Shuang Zhang, Shengrui Zhang, Weijie Shi, Yayi Wei, Xiangzhao Wang. Critical Pattern Selection Method for Full-Chip Source and Mask Optimization Based on Depth-First Search[J]. Acta Optica Sinica, 2022, 42(10): 1022002
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