Qi-Hao ZHANG, Sheng-Qiang BAI, Li-Dong CHEN, [in Chinese], [in Chinese], [in Chinese]. Technologies and Applications of Thermoelectric Devices: Current Status, Challenges and Prospects[J]. Journal of Inorganic Materials, 2019, 34(3): 279
- Journal of Inorganic Materials
- Vol. 34, Issue 3, 279 (2019)
![Timelines underscoring the improvement in (a) zT value of typical thermoelectric materials[6,7] and (b) conversion efficiency of typical thermoelectric power generation devices[10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40]](/Images/highlights-null.jpg)
. Timelines underscoring the improvement in (a) zT value of typical thermoelectric materials[6,7] and (b) conversion efficiency of typical thermoelectric power generation devices[10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31,32,33,34,35,36,37,38,39,40]
. Schematic diagram of the full-chain development of thermoelectric conversion technology
. Diagram of key scientific and technical issues in the design and integration of TE devices
. Schematic diagram of energy conversion process for thermoelectric power generation devices[45]
. (a) Conversion efficiency as a function of thermoelectricelement height for different thermal contact parameter,r ,and (b) power output ratio P c/P max as a function of the electrical contact parameter,n, for different thermoelectric element height[46]
. Schematic diagram of various thermal losses in thermoelectric devices
. Analogical scheme of the thermoelectric phenomena with the thermal capacitances $C_{n}=\rho ·n·C_{p_{n}}·\frac{H}{N}·A$ and thermal conductances $K_{n}=\frac{k_{n}·A}{H/N}$ [55]
. Logical framework for the full-parameter optimization of a thermoelectric power generation module[40]
. Diagram of main failure modes of thermoelectric devices
. Scanning electron microscope images of CoSb3/Ti/Mo-Cu interface after thermal aging at 550 ℃ for different periods[115]
(a) 0; (b) 8 d; (c) 20 d; (d) 30 d
(a) 0; (b) 8 d; (c) 20 d; (d) 30 d
. (a) Schematic diagram of the formation of Ti(100-x )Alx -Yb0.6Co4Sb12 interface, (b) the diffusion layer thickness and (c) specificcontact resistivity of the Ti(100-x )Alx -Yb0.6Co4Sb12 interface as a function of the thermal aging time under 600 ℃ and vacuum condition[79]
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Table 1. Electrode, interface layer and joining method of typical thermoelectric devices
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