AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics

Xianhe Liu; Kishwar Mashooq; David A. Laleyan; Eric T. Reid; Zetian Mi

doi:10.1364/PRJ.7.000B12

Journals >Photonics Research >Volume 7 >Issue 6 >Page B12 > Article

Photonics Research
Vol. 7, Issue 6, B12 (2019)

AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics

Xianhe Liu^1、2, Kishwar Mashooq¹, David A. Laleyan¹, Eric T. Reid¹, and Zetian Mi^1、*

Author Affiliations

¹Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

²Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada

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DOI: 10.1364/PRJ.7.000B12 Cite this Article Set citation alerts

Xianhe Liu, Kishwar Mashooq, David A. Laleyan, Eric T. Reid, Zetian Mi. AlGaN nanocrystals: building blocks for efficient ultraviolet optoelectronics[J]. Photonics Research, 2019, 7(6): B12 Copy Citation Text

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Abstract

AlGaN nanocrystals have emerged as the building blocks of future optoelectronic devices operating in the ultraviolet (UV) spectral range. In this article, we describe the design and performance characteristics of AlGaN nanocrystal UV light-emitting diodes (LEDs) and surface-emitting UV laser diodes. The selective-area epitaxy and structural, optical, and electrical properties of AlGaN nanocrystals are presented. The recent experimental demonstrations of AlGaN nanocrystal LEDs and laser diodes are also discussed.

\frac{d N}{d t} = \frac{J}{q d} - R_{r} - R_{nr} - N_{ph} g \frac{c}{n},

(1)