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Chinese Optics Letters
Vol. 14, Issue 2, 022501 (2016)

Short-wave infrared detector with double barrier structure and low dark current density

Yu Dong¹, Guanglong Wang^1、*, Haiqiao Ni^2、**, Kangming Pei², Zhongtao Qiao¹, Jianhui Chen¹, Fengqi Gao¹, Baochen Li¹, and Zhichuan Niu²

Author Affiliations

¹Laboratory of Nanotechnology and Microsystems, Mechanical Engineering College, Shijiazhuang 050000, China

²State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100084, China

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DOI: 10.3788/COL201614.022501 Cite this Article Set citation alerts

Yu Dong, Guanglong Wang, Haiqiao Ni, Kangming Pei, Zhongtao Qiao, Jianhui Chen, Fengqi Gao, Baochen Li, Zhichuan Niu. Short-wave infrared detector with double barrier structure and low dark current density[J]. Chinese Optics Letters, 2016, 14(2): 022501 Copy Citation Text

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References

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Yu Dong, Guanglong Wang, Haiqiao Ni, Kangming Pei, Zhongtao Qiao, Jianhui Chen, Fengqi Gao, Baochen Li, Zhichuan Niu. Short-wave infrared detector with double barrier structure and low dark current density[J]. Chinese Optics Letters, 2016, 14(2): 022501

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