Short-wave infrared detector with double barrier structure and low dark current density

Yu Dong; Guanglong Wang; Haiqiao Ni; Kangming Pei; Zhongtao Qiao; Jianhui Chen; Fengqi Gao; Baochen Li; Zhichuan Niu

doi:10.3788/COL201614.022501

Journals >Chinese Optics Letters >Volume 14 >Issue 2 >Page 022501 > Article

Chinese Optics Letters
Vol. 14, Issue 2, 022501 (2016)

Short-wave infrared detector with double barrier structure and low dark current density

Yu Dong¹, Guanglong Wang^1、*, Haiqiao Ni^2、**, Kangming Pei², Zhongtao Qiao¹, Jianhui Chen¹, Fengqi Gao¹, Baochen Li¹, and Zhichuan Niu²

Author Affiliations

¹Laboratory of Nanotechnology and Microsystems, Mechanical Engineering College, Shijiazhuang 050000, China

²State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100084, China

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DOI: 10.3788/COL201614.022501 Cite this Article Set citation alerts

Yu Dong, Guanglong Wang, Haiqiao Ni, Kangming Pei, Zhongtao Qiao, Jianhui Chen, Fengqi Gao, Baochen Li, Zhichuan Niu. Short-wave infrared detector with double barrier structure and low dark current density[J]. Chinese Optics Letters, 2016, 14(2): 022501 Copy Citation Text

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Abstract

Short-wave infrared (SWIR) detectors combining

AlAs / {In}_{0.53} {Ga}_{0.47} As / AlAs

double barrier structure (DBS) with

{In}_{0.53} {Ga}_{0.47} As

absorption layer are fabricated by molecular beam epitaxy. By adding a p-charge layer, the dark current density of the detector is lowered by 3 orders of magnitude. The responsivity of the detector is tested at room temperature, which reaches 6000 A/W when the power of the incident light is 0.7 nW. The noise equivalent power (NEP) of the detector at 5 kHz is measured to be