• Chinese Optics Letters
  • Vol. 14, Issue 7, 070401 (2016)
Bingxin Kang, Yi Cai, and Lingxue Wang*
Author Affiliations
  • School of Optoelectronics, Beijing Institute of Technology, Key Laboratory of Photoelectronic Imaging Technology and Systems, Beijing Engineering Research Centre for Mixed Reality and Advanced Display Technology, Beijing 100081, China
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    DOI: 10.3788/COL201614.070401 Cite this Article Set citation alerts
    Bingxin Kang, Yi Cai, Lingxue Wang. External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings[J]. Chinese Optics Letters, 2016, 14(7): 070401 Copy Citation Text show less

    Abstract

    A infrared light trapping structure combining front subwavelength gratings and rear ZnO:Al nanoparticles for a PtSi Schottky-barrier detector over a 3–5 μm waveband is theoretically investigated. By selecting the proper plasmonic material and optimizing the parameters for the proposed structure, the absorption of the PtSi layer is dramatically improved. The theoretical results show that this improvement eventually translates into an equivalent external quantum efficiency (EQE) enhancement of 2.46 times at 3–3.6 μm and 2.38 times at 3.6–5 μm compared to conventional structures. This improvement in the EQE mainly lies in the increase of light path lengths within the PtSi layer by the subwavelength grating diffraction and nanoparticle-scattering effects.
    NEΔT=12hc(λ1+λ2)kTb2(2πc4F2+1)τaτoaffAetfλ1λ2EQEλ4(exp(hcλkTb)1)dλNn,(1)

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    Bingxin Kang, Yi Cai, Lingxue Wang. External quantum efficiency-enhanced PtSi Schottky-barrier detector utilizing plasmonic ZnO:Al nanoparticles and subwavelength gratings[J]. Chinese Optics Letters, 2016, 14(7): 070401
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