Microstructure and Luminescent Studies of Electron-Trapping Thin Film

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 18 >Issue 5 >Page 591 > Article

Acta Optica Sinica
Vol. 18, Issue 5, 591 (1998)

Microstructure and Luminescent Studies of Electron-Trapping Thin Film

[in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microstructure and Luminescent Studies of Electron-Trapping Thin Film[J]. Acta Optica Sinica, 1998, 18(5): 591 Copy Citation Text

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References

[1] J. Lindmayer. A new erasable optical memory. Solid State Technology, 1988, 31(8): 135～138

[2] S. Jutamulla, G. M. Storti, W. Selderman et al.. Use of electron trapping materials in optical signal processing. Appl. Opt., 1993, 32(5): 743～745

[3] Z. Wen, N. H. Farhat, Z. J. Zhao. Dynamics of electron-trapping materials for use in optoelectron neurocomputing. Appl. Opt., 1993, 32(35): 7251～7265

[4] Chen Shuchun, Dai Fengmei. Up-conversion and optical storage properties of SrS:Eu,Sm in PMMA. Chinese J. Lasers, 1993, B2(1): 67～69

[11] K. Hirabayashi, H. Kozawaguchi. Photo-assisted metal organic chemical vapor deposition preparation of polycrystalline ZnS:Mn films for thin film electroluminescent devices. Japan J. Appl. Phys., 1989, 28(5): 814～818

[12] P. K. Ghosh, V. Shanker., Point defects in polycrystalline calcium sulphide. J. Luminescence, 1979, 20(2): 139～145

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microstructure and Luminescent Studies of Electron-Trapping Thin Film[J]. Acta Optica Sinica, 1998, 18(5): 591

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