• Acta Optica Sinica
  • Vol. 18, Issue 5, 591 (1998)
[in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microstructure and Luminescent Studies of Electron-Trapping Thin Film[J]. Acta Optica Sinica, 1998, 18(5): 591 Copy Citation Text show less

    Abstract

    Infrared upconversion and optical storage thin film CaS: Eu, Sm with red light output has been successfully developed by electron beam deposition (EBD). The film was prepared by doubly rare earth ions doped alkaline earth sulfides (AES) CaS. Its phases and microstructures were identified by X ray diffraction (XRD). Surface morphology of the films was observed by scanning electron microscope (SEM). The chemical composition of the films was determined by electron probe microanalysis (EPMA). The studies on the optical properties of the film were presented.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microstructure and Luminescent Studies of Electron-Trapping Thin Film[J]. Acta Optica Sinica, 1998, 18(5): 591
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