Electrical measurement and simulation of Si/Si bonding structure

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 21 >Issue 3 >Page 381 > Article

Chinese Journal of Quantum Electronics
Vol. 21, Issue 3, 381 (2004)

Electrical measurement and simulation of Si/Si bonding structure

[in Chinese]^*, [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Electrical measurement and simulation of Si/Si bonding structure[J]. Chinese Journal of Quantum Electronics, 2004, 21(3): 381 Copy Citation Text

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References

[1] Reznicek A,Senz S,Breitenstein O.Electrical characterization of UHV-bonded silicon interfaces [OL].Proceedings of MRS Online Pablications(www.mrs.org),681E:I44.

[2] Fedotov A,Saad A M H,Enisherlova K,et al.Electrical properties of Si/SiO2/Si structures produced by direct bonding of pre-oxidized silicon wafers [J].Microelectronic Engineering,2003,66:522-529.

[4] Depas M,Vermeire B,et al.Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Sistructures [J].Solid-state Electronics,1995,38(8):1465-1471.

[in Chinese], [in Chinese], [in Chinese]. Electrical measurement and simulation of Si/Si bonding structure[J]. Chinese Journal of Quantum Electronics, 2004, 21(3): 381

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