Author Affiliations
1Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China2University of Chinese Academy of Sciences, Beijing 101407, Chinashow less
Fig. 1. Diagram of fabrication of polymer micro/nanostructure with positive photoresist
Fig. 2. Experimental results of DMD based maskless lithography exposure. (a) Scanning electron microscope (SEM) image of 10 μm equidistant line array structure; (b) SEM image of 1 μm equidistant line array structure; (c) minimum line width of 250 nm; (d) line width versus exposure time
Fig. 3. Diagram of single optical field line scanning and results obtained. (a) Diagram of single optical field line scanning;(b) SEM image of 1 μm equidistant line array structure; (c) SEM image of 500 nm equidistant line array structure
Fig. 4. Characterization of width of trench structures fabricated by single optical field exposure and line scanning using atomic force microscopy. (a) (b) Topography of 1 μm equidistant line array structure fabricated by single optical field exposure; (c) height distribution of 1 μm equidistant line array structure fabricated by single optical field exposure; (d)(e) topography of 1 μm equidistant line array structure fabricated by single optical field line scanning; (f) height distribution of 1 μm equi
Fig. 5. Variation in trench width of 1 μm equidistant line array structures fabricated by single optical field exposure and single optical field line scanning
Fig. 6. Diagrams of splicing and equidistant line array structures. (a) Diagram of complete structure; (b) diagram of partial structure; (c) SEM image of 1 μm equidistant line array structure; (d) SEM image of 10 μm equidistant line array structure
Fig. 7. Contact angle between equidistant line array structure and water drop, and contact angle between photoresist film and glass substrate. Variation in contact angle between 1 μL water drop and (a) 1 μm, (b) 3 μm, and (c) 5 μm equidistant line array structures in parallel and vertical directions relative to structure; (d) contact angle between photoresist film and glass substrate
Fig. 8. Contact angle varies with line space in parallel and vertical directions relative to structure
Processing method | Width of trench /μm | Variance |
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Single optical field exposure | 0.282 | 0.238 | 0.227 | 0.232 | 0.254 | 0.243 | 0.199 | 0.127 | 0.043 | Single optical field line scanning | 0.540 | 0.540 | 0.520 | 0.500 | 0.480 | 0.500 | 0.480 | 0.520 | 0.020 |
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Table 1. Widths of trench structures fabricated by two processing methods and variance analysis