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    Journals >Journal of Semiconductors >Volume 44 >Issue 6 >Page 062801 > Article
    • Journal of Semiconductors
    • Vol. 44, Issue 6, 062801 (2023)
    Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD
    Wenbo Tang1,2, Xueli Han3,4, Xiaodong Zhang1,2, Botong Li1,2..., Yongjian Ma1,2, Li Zhang2, Tiwei Chen1,2, Xin Zhou2, Chunxu Bian2, Yu Hu1,2, Duanyang Chen3, Hongji Qi3,4,*, Zhongming Zeng1,2 and Baoshun Zhang1,2,**|Show fewer author(s)
    Author Affiliations
  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • 2Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 3Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 4Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China
    • show less
    DOI: 10.1088/1674-4926/44/6/062801 Cite this Article
    Wenbo Tang, Xueli Han, Xiaodong Zhang, Botong Li, Yongjian Ma, Li Zhang, Tiwei Chen, Xin Zhou, Chunxu Bian, Yu Hu, Duanyang Chen, Hongji Qi, Zhongming Zeng, Baoshun Zhang. Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD[J]. Journal of Semiconductors, 2023, 44(6): 062801 Copy Citation Text show less
    References

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    Wenbo Tang, Xueli Han, Xiaodong Zhang, Botong Li, Yongjian Ma, Li Zhang, Tiwei Chen, Xin Zhou, Chunxu Bian, Yu Hu, Duanyang Chen, Hongji Qi, Zhongming Zeng, Baoshun Zhang. Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD[J]. Journal of Semiconductors, 2023, 44(6): 062801
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