Homoepitaxial growth of (100) Si-doped β-Ga2O3 films via MOCVD

Wenbo Tang; Xueli Han; Xiaodong Zhang; Botong Li; Yongjian Ma; Li Zhang; Tiwei Chen; Xin Zhou; Chunxu Bian; Yu Hu; Duanyang Chen; Hongji Qi; Zhongming Zeng; Baoshun Zhang

doi:10.1088/1674-4926/44/6/062801

Journals >Journal of Semiconductors >Volume 44 >Issue 6 >Page 062801 > Article

Journal of Semiconductors
Vol. 44, Issue 6, 062801 (2023)

Homoepitaxial growth of (100) Si-doped β-Ga₂O₃ films via MOCVD

Wenbo Tang^1,2, Xueli Han^3,4, Xiaodong Zhang^1,2, Botong Li^1,2..., Yongjian Ma^1,2, Li Zhang², Tiwei Chen^1,2, Xin Zhou², Chunxu Bian², Yu Hu^1,2, Duanyang Chen³, Hongji Qi^3,4,*, Zhongming Zeng^1,2 and Baoshun Zhang^1,2,**|Show fewer author(s)

Author Affiliations

¹School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China

²Nanofabrication facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

³Research Center of Laser Crystal, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

⁴Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China

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DOI: 10.1088/1674-4926/44/6/062801 Cite this Article

Wenbo Tang, Xueli Han, Xiaodong Zhang, Botong Li, Yongjian Ma, Li Zhang, Tiwei Chen, Xin Zhou, Chunxu Bian, Yu Hu, Duanyang Chen, Hongji Qi, Zhongming Zeng, Baoshun Zhang. Homoepitaxial growth of (100) Si-doped β-Ga₂O₃ films via MOCVD[J]. Journal of Semiconductors, 2023, 44(6): 062801 Copy Citation Text

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(Color online) Surface morphologies of β-Ga2O3 films grown in different conditions. AFM topography images of sample (a) A1, (b) A2, (c) A3 and (d) A4. 3D AFM images of sample (e) A1 and (f) A4.

Fig. 1. (Color online) Surface morphologies of β-Ga₂O₃ films grown in different conditions. AFM topography images of sample (a) A₁, (b) A₂, (c) A₃ and (d) A₄. 3D AFM images of sample (e) A₁ and (f) A₄.

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(Color online) AFM images of the Si-doped β-Ga2O3 films grown with different flow rate of SiH4. (a) B2, 0.5 sccm. (b) B3, 1.2 sccm. (c) B4, 3 sccm. (d) B5, 6 sccm. (e) B6, 10 sccm. (f) B7, 20 sccm.

Fig. 2. (Color online) AFM images of the Si-doped β-Ga₂O₃ films grown with different flow rate of SiH₄. (a) B₂, 0.5 sccm. (b) B₃, 1.2 sccm. (c) B₄, 3 sccm. (d) B₅, 6 sccm. (e) B₆, 10 sccm. (f) B₇, 20 sccm.

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$(Color online) The HRXRD rocking curves of the (400) diffraction peak for the homoepitaxial films.$

Fig. 3. (Color online) The HRXRD rocking curves of the (400) diffraction peak for the homoepitaxial films.

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Fig. 4. (Color online) ToF-SIMS profiles of Si for the epitaxial films.

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Fig. 5. (Color online) Plot of 1/C²–V for the epitaxial β-Ga₂O₃ films with high doping levels.

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Fig. 6. (Color online) Comparison of the concentrations extracted from C–V, SIMS, and Hall measurements.

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Fig. 7. (Color online) J–V characteristics of the β-Ga₂O₃ films acquired on TLM patterns in (a) a linear plot and (b) a semi-log plot. (c) Linear fit of total resistance as a function of pad spacing.

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Sample number	R_c (Ω·mm)	R_SH (Ω/□)	L_T (μm)	ρ_c (10⁻⁴ Ω·cm²)
B₄	7.67	2466.93	3.11	2.38
B₅	6.90	1324.57	5.21	3.59
B₆	3.73	1084.55	3.44	1.29
B₇	11.18	1929.83	5.79	6.48
Ref	2.81	751.48	3.74	1.05

Table 1. Summary of the electronic characteristics extracted from the TLM measurements corresponding to different contact lengths on the basis of linear TLM theory.