INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 23 >Issue 3 >Page 172 > Article

Journal of Infrared and Millimeter Waves
Vol. 23, Issue 3, 172 (2004)

INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS

[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(3): 172 Copy Citation Text

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References

[1] Mallon C E, Naber J A, Colwell J F, et al. Effects of electron radiation on the electrical and optical properties of Hg1-xCdxTe[J]. IEEE Trans. Nucl. Sci. , 1973, HS-20:214-219.

[2] Voitsehovski A V, Broudnyi V N, Lilenko Yu V, et al.High temperature defects in electron irradiated semiconductors HgCdTe, PbSnTe [ J ]. Solid State Communications,1979, 31: 105-108.

[3] Green Barry A, Leadon Roland E, Mallon Charles E. Mobility changes produced by electron irradiation of n-type Hg1 -x CdxTe[J]. J. Appl. Phys., 1976, 47(7): 3127-3134.

[4] Mallon C E, Green B A, Leadon R E, et al. Radiation effects in Hg1-xCdxTe[J]. IEEE Trans. Nucl. Sci. , 1975,NS-22: 2283-2288.

[6] Willardson R K, Albert C Beer. Semiconductors and Semimetals[ M]. New York: Academic Press, 1981,18: 251.

[7] Hu Xin-Wen, Fang Jia-Xiong, Wang Qin, et al. A deep level induced by gamma-irradiation in Hg1-xCdxTe[ J]. Appl. Phys. Lett. , 1998, 73( 1 ): 91-92.

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