• Journal of Infrared and Millimeter Waves
  • Vol. 23, Issue 3, 172 (2004)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
Author Affiliations
  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(3): 172 Copy Citation Text show less

    Abstract

    Radiation effects of 1MeV electron on middle wavelength Hg 1-xCd xTe photoconductive detectors were studied. Room and liquid nitrogen temperatures resistance, response spectrum, current responsivity and detectivity were measured before and after irradiation. It is observed that after irradiation, the detectors’ peak and cutoff wavelength move towards short wavelength; the room temperature resistance and current responsivity become decreasing when irradiation dosage is larger than 10 15/cm 2; the detectivity doesn’t show a monotonical change owing to the influnce of noise.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. INFLUENCE OF 1MEV ELECTRON IRRADIATION ON HgCdTe PHOTOCONDUCTVIE DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(3): 172
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