The introduction of low-dimensional nanostructures provides a potential application to the development of intermediate band solar cell, which is one of the hottest researches in the third-generation photovoltaic power field. By analyzing the mechanism of quantum dot intermediate band solar cell, the usual preparation and characterization are introduced. It is significant to review the late research development of a typical III-V compound and silicon-based structure of quantum dot intermediate band solar cell, especially the various methods proposed by researchers to improve the battery. In addition, a new kind of structure named quantum ring is briefly overviewed though it is a deformed quantum dot. This new nanostructure with its most significant feature that has no stress is an effective means to solve the quantum dots stress accumulation. Finally, some remarkable research problems are also addressed.