• Infrared and Laser Engineering
  • Vol. 51, Issue 3, 20220152 (2022)
Zhen Yang, Yuefeng Wang, Huimin Jin, Zhiyuan Wang, Peipeng Xu*, Wei Zhang, Weiwei Chen, and Shixun Dai
Author Affiliations
  • Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province, Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China
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    DOI: 10.3788/IRLA20220152 Cite this Article
    Zhen Yang, Yuefeng Wang, Huimin Jin, Zhiyuan Wang, Peipeng Xu, Wei Zhang, Weiwei Chen, Shixun Dai. Review of chalcogenide glass integrated photonic devices (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20220152 Copy Citation Text show less
    (a) Optical micrograph of 4 µm×2.6 µm As2S3 snakes strip waveguide[24]; (b) AFM picture of As2S3 waveguide sidewall roughness after thermal annealing[25]; (c) Scanning Electron Microscopy (SEM) and cross-section of As20S80 disk resonator[26]; (d) SEM and cross-section of As20S80 microring resonator[27]; (e) Depositing the As2S3core material on the SiO2 platform structure, and SEM of cleaved cross-section of waveguide[28]
    Fig. 1. (a) Optical micrograph of 4 µm×2.6 µm As2S3 snakes strip waveguide[24]; (b) AFM picture of As2S3 waveguide sidewall roughness after thermal annealing[25]; (c) Scanning Electron Microscopy (SEM) and cross-section of As20S80 disk resonator[26]; (d) SEM and cross-section of As20S80 microring resonator[27]; (e) Depositing the As2S3core material on the SiO2 platform structure, and SEM of cleaved cross-section of waveguide[28]
    (a) SEM cross-sectional view image of GeAsSe waveguide[33]; (b) SEM image of a GeSbS microresonator[36]; (c) SEM image of a Ge28Sb12Se60 microdisk resonator[37]; (d) SEM image of a Ge28Sb12Se60 microring[38]; (e) SEM top-view image of a suspended GeAsSe microdisk resonator[33]; (f) Lorentzian fit to the resonance dip[36]; (g) Lorentzian fit to the resonance dip at 1559.657 nm[37]; (h) Lorentzian fit to the resonance dip[38]
    Fig. 2. (a) SEM cross-sectional view image of GeAsSe waveguide[33]; (b) SEM image of a GeSbS microresonator[36]; (c) SEM image of a Ge28Sb12Se60 microdisk resonator[37]; (d) SEM image of a Ge28Sb12Se60 microring[38]; (e) SEM top-view image of a suspended GeAsSe microdisk resonator[33]; (f) Lorentzian fit to the resonance dip[36]; (g) Lorentzian fit to the resonance dip at 1559.657 nm[37]; (h) Lorentzian fit to the resonance dip[38]
    (a) 200 μm radius microdisk resonator; (b) Simulated field intensity profile of the fundamental mode of the microdisk resonator[22]; (c) SEM image of the cross-section of waveguide[48]
    Fig. 3. (a) 200 μm radius microdisk resonator; (b) Simulated field intensity profile of the fundamental mode of the microdisk resonator[22]; (c) SEM image of the cross-section of waveguide[48]
    (a) Schematic diagram and SEM image of the Ge23Sb7S70 spiral waveguide[54]; (b) Cross-sectional view and the corresponding SEM image of the ridge waveguide comprising two different compositions of GeSeSe glasses[61]; (c) Schematic diagram and cross-sectional SEM image of the the ZnSe rib waveguide[63]; (d) Cross-sectional SEM image of the Ge28Sb12Se60 strip waveguide and schematic diagram of the waveguide integrated with a PDMS gas cell[56]; (e) Schematic diagram of the Ge28Sb12Se60 waveguide sensor using the silver island film[64]
    Fig. 4. (a) Schematic diagram and SEM image of the Ge23Sb7S70 spiral waveguide[54]; (b) Cross-sectional view and the corresponding SEM image of the ridge waveguide comprising two different compositions of GeSeSe glasses[61]; (c) Schematic diagram and cross-sectional SEM image of the the ZnSe rib waveguide[63]; (d) Cross-sectional SEM image of the Ge28Sb12Se60 strip waveguide and schematic diagram of the waveguide integrated with a PDMS gas cell[56]; (e) Schematic diagram of the Ge28Sb12Se60 waveguide sensor using the silver island film[64]
    (a) Schematic, electric field distribution and band diagram of the Ge11.5As24Se64.5 grating resonance sensor [68]; (b) SEM images of the Ge28Sb12Se60 waveguide sensor using micro-ring resonance [70]; (c) SEM images of the Ge28Sb12Se60 slot waveguide and the Ge28Sb12Se60 slot micro-ring sensor [71]
    Fig. 5. (a) Schematic, electric field distribution and band diagram of the Ge11.5As24Se64.5 grating resonance sensor [68]; (b) SEM images of the Ge28Sb12Se60 waveguide sensor using micro-ring resonance [70]; (c) SEM images of the Ge28Sb12Se60 slot waveguide and the Ge28Sb12Se60 slot micro-ring sensor [71]
    (a) Schematic diagram of on-chip SC integrated with optical sensor [39]; (b) Schematic diagram and cross-sectional view of the optical sensor using spiral waveguide integrated with PbTe photodetector [55]
    Fig. 6. (a) Schematic diagram of on-chip SC integrated with optical sensor [39]; (b) Schematic diagram and cross-sectional view of the optical sensor using spiral waveguide integrated with PbTe photodetector [55]
    (a) Typical waveguide cross section under SEM inspection[29]; (b) The simulation of supercontinuum spectrum broadening[29]; (c) Experimental results of supercontinuum spectrum generation in TM mode[29]; (d) Typical waveguide cross section under SEM inspection[52]; (e) Experimental SC evolution with increasing powers at a pump wavelength of 4.184 μm[52]
    Fig. 7. (a) Typical waveguide cross section under SEM inspection[29]; (b) The simulation of supercontinuum spectrum broadening[29]; (c) Experimental results of supercontinuum spectrum generation in TM mode[29]; (d) Typical waveguide cross section under SEM inspection[52]; (e) Experimental SC evolution with increasing powers at a pump wavelength of 4.184 μm[52]
    (a) Overview of SBS: A pump wave (ω1) scatters from and re-enforces an acoustic phonon (Ω) and is downshifted to a Stokes wave (ω2), the result is a narrow Stokes peak separated at a distance of GHz from the pump, this configuration shows backward Brillouin scattering[86]; (b) Schematic of a BL based on photonic chip[82]; (c) Schematic of the hybrid As2S3ring resonator structure, concept figure for the lasing conditions[84]; (d) SBS-based integrated microwave photonic filter, stopband center frequency tuning[83]
    Fig. 8. (a) Overview of SBS: A pump wave (ω1) scatters from and re-enforces an acoustic phonon (Ω) and is downshifted to a Stokes wave (ω2), the result is a narrow Stokes peak separated at a distance of GHz from the pump, this configuration shows backward Brillouin scattering[86]; (b) Schematic of a BL based on photonic chip[82]; (c) Schematic of the hybrid As2S3ring resonator structure, concept figure for the lasing conditions[84]; (d) SBS-based integrated microwave photonic filter, stopband center frequency tuning[83]
    (a) Lorentzian fit to the resonance dip of As2S3 microsphere[91]; (b) Raman emission power versus coupled pump power[91]; (c) Image of a typical packaged As2S3 microsphere[92]; (d) Lorentzian fit to the resonance dip of typical packaged As2S3 microsphere[92]; (e) Spectrum of a 5 Raman orders cascaded SRS emission of an As2S3 microsphere[92]; (f) Experimental spectrum of four-cascade Raman lasing[85]; (g) Measured Raman spectrum when increasing the pump power to ~30 mW[36]
    Fig. 9. (a) Lorentzian fit to the resonance dip of As2S3 microsphere[91]; (b) Raman emission power versus coupled pump power[91]; (c) Image of a typical packaged As2S3 microsphere[92]; (d) Lorentzian fit to the resonance dip of typical packaged As2S3 microsphere[92]; (e) Spectrum of a 5 Raman orders cascaded SRS emission of an As2S3 microsphere[92]; (f) Experimental spectrum of four-cascade Raman lasing[85]; (g) Measured Raman spectrum when increasing the pump power to ~30 mW[36]
    Integrated photonic chalcogenide phase-change switching. (a) Schematic of the integrated photonic SiN-on insulator platform for broadband switching operation[102]; (b) Spectral shift and loss characterization of GST using silicon microring resonators[103]; (c) Low-loss broadband directional coupler switches based on GST[104]
    Fig. 10. Integrated photonic chalcogenide phase-change switching. (a) Schematic of the integrated photonic SiN-on insulator platform for broadband switching operation[102]; (b) Spectral shift and loss characterization of GST using silicon microring resonators[103]; (c) Low-loss broadband directional coupler switches based on GST[104]
    (a) Schematic of all-optical multi-level memory based on Si3N4 microring resonator[106]; (b) Operation principle of an all-optical fully integrated on-chip multilevel memory; (c) A multibit and multiwavelength architecture[96]
    Fig. 11. (a) Schematic of all-optical multi-level memory based on Si3N4 microring resonator[106]; (b) Operation principle of an all-optical fully integrated on-chip multilevel memory; (c) A multibit and multiwavelength architecture[96]
    PCM based optical VMM and neural networks: (a) A chip-scale all-optical abacus based on GST on Si3N4[108]; (b) Photonic in-memory computing demonstrating optical scalar-scalar multiplication and matrix-vector multiplication[110]; (c) An integrated photonic tensor core enabled by an optical frequency comb and in-memory computing cell arrays[111]
    Fig. 12. PCM based optical VMM and neural networks: (a) A chip-scale all-optical abacus based on GST on Si3N4[108]; (b) Photonic in-memory computing demonstrating optical scalar-scalar multiplication and matrix-vector multiplication[110]; (c) An integrated photonic tensor core enabled by an optical frequency comb and in-memory computing cell arrays[111]
    MaterialsRefractive indexTypes of waveguidesDimension/μm2Loss/dB·cm−1Reference
    As2S32.43Ring10×1.30.03[28]
    As2Se32.81Waveguide6.0×1.9< 0.78[41-42]
    Ge11.5As24S64.52.30Waveguide1.55×0.70.25[43-44]
    Ge11.5As24Se64.52.55Waveguide2.0×1.00.48[33]
    Ge23Sb7S702.22Ring0.75×0.630.84[45]
    Ge25Sb10S652.2Ring2.4×0.80.19[46]
    Ge28Sb12Se602.50Waveguide0.75×0.331.0[40]
    Ge28Sb12Se602.80Ring0.8×0.31.3[38]
    Table 1. Current several typical chalcogenide waveguides at 1.55 µm
    MaterialsTypes of waveguidesDimension/μm2Wavelength/μmLoss/dB·cm-1Reference
    As2S3Waveguide4.0 × 2.53.60.75[47]
    As2S3Waveguide1.2 × 0.62.01.447[50]
    As2Se3Microdisk2.5 × 1.15.20.7[22]
    As2Se3Waveguide3.0 × 1.355.272 ± 4[51]
    Ge11.5As24Se64.5Waveguide4.0 × 1.255.00.3[48]
    Ge11.5As24Se64.5Ring2.5 × 2.255.20.84[49]
    Ge11.5As24Se64.5Waveguide4.0 × 2.23.8 - 5.0~0.6[52]
    Ge23Sb7S70Microdisk3.0 × 1.85.20.21[53]
    Ge23Sb7S70Waveguide2.0 × 1.23.317.0[54]
    Ge23Sb7S70Waveguide2.0 × 1.03.318.0[55]
    Ge28Sb12Se60Waveguide2.8 × 1.04.3195.1[56]
    Table 2. Recent research progress of chalcogenide optical waveguide performance in mid-infrared band
    MaterialsPump conditionLength/cmSC spectrum band width/μmReference
    As2S33.26 μm/7.5 ps/1.5 MHz6.62.9-4.2[47]
    Ge11.5As24Se64.55.0 μm/250 fs7.02.5-10[76]
    Ge11.5As24Se64.54.0 μm/320 fs/21 MHz1.01.8-7.5[77]
    Ge11.5As24Se64.54.184 μm/330 fs/21 MHz1.82-10[52]
    Ge20As20Se15Te455.8μm/120 fs0.52-13[78]
    Table 3. Research progress of on-chip mid-infrared SC output in chalcogenide waveguides
    Zhen Yang, Yuefeng Wang, Huimin Jin, Zhiyuan Wang, Peipeng Xu, Wei Zhang, Weiwei Chen, Shixun Dai. Review of chalcogenide glass integrated photonic devices (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20220152
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