Fig. 1. (a) Optical micrograph of 4 µm×2.6 µm As
2S
3 snakes strip waveguide
[24]; (b) AFM picture of As
2S
3 waveguide sidewall roughness after thermal annealing
[25]; (c) Scanning Electron Microscopy (SEM) and cross-section of As
20S
80 disk resonator
[26]; (d) SEM and cross-section of As
20S
80 microring resonator
[27]; (e) Depositing the As
2S
3core material on the SiO
2 platform structure, and SEM of cleaved cross-section of waveguide
[28] Fig. 2. (a) SEM cross-sectional view image of GeAsSe waveguide
[33]; (b) SEM image of a GeSbS microresonator
[36]; (c) SEM image of a Ge
28Sb
12Se
60 microdisk resonator
[37]; (d) SEM image of a Ge
28Sb
12Se
60 microring
[38]; (e) SEM top-view image of a suspended GeAsSe microdisk resonator
[33]; (f) Lorentzian fit to the resonance dip
[36]; (g) Lorentzian fit to the resonance dip at 1559.657 nm
[37]; (h) Lorentzian fit to the resonance dip
[38] Fig. 3. (a) 200 μm radius microdisk resonator; (b) Simulated field intensity profile of the fundamental mode of the microdisk resonator
[22]; (c) SEM image of the cross-section of waveguide
[48] Fig. 4. (a) Schematic diagram and SEM image of the Ge
23Sb
7S
70 spiral waveguide
[54]; (b) Cross-sectional view and the corresponding SEM image of the ridge waveguide comprising two different compositions of GeSeSe glasses
[61]; (c) Schematic diagram and cross-sectional SEM image of the the ZnSe rib waveguide
[63]; (d) Cross-sectional SEM image of the Ge
28Sb
12Se
60 strip waveguide and schematic diagram of the waveguide integrated with a PDMS gas cell
[56]; (e) Schematic diagram of the Ge
28Sb
12Se
60 waveguide sensor using the silver island film
[64] Fig. 5. (a) Schematic, electric field distribution and band diagram of the Ge
11.5As
24Se
64.5 grating resonance sensor
[68]; (b) SEM images of the Ge
28Sb
12Se
60 waveguide sensor using micro-ring resonance
[70]; (c) SEM images of the Ge
28Sb
12Se
60 slot waveguide and the Ge
28Sb
12Se
60 slot micro-ring sensor
[71] Fig. 6. (a) Schematic diagram of on-chip SC integrated with optical sensor
[39]; (b) Schematic diagram and cross-sectional view of the optical sensor using spiral waveguide integrated with PbTe photodetector
[55] Fig. 7. (a) Typical waveguide cross section under SEM inspection
[29]; (b) The simulation of supercontinuum spectrum broadening
[29]; (c) Experimental results of supercontinuum spectrum generation in TM mode
[29]; (d) Typical waveguide cross section under SEM inspection
[52]; (e) Experimental SC evolution with increasing powers at a pump wavelength of 4.184 μm
[52] Fig. 8. (a) Overview of SBS: A pump wave (
ω1) scatters from and re-enforces an acoustic phonon (
Ω) and is downshifted to a Stokes wave (
ω2), the result is a narrow Stokes peak separated at a distance of GHz from the pump, this configuration shows backward Brillouin scattering
[86]; (b) Schematic of a BL based on photonic chip
[82]; (c) Schematic of the hybrid As
2S
3ring resonator structure, concept figure for the lasing conditions
[84]; (d) SBS-based integrated microwave photonic filter, stopband center frequency tuning
[83] Fig. 9. (a) Lorentzian fit to the resonance dip of As
2S
3 microsphere
[91]; (b) Raman emission power versus coupled pump power
[91]; (c) Image of a typical packaged As
2S
3 microsphere
[92]; (d) Lorentzian fit to the resonance dip of typical packaged As
2S
3 microsphere
[92]; (e) Spectrum of a 5 Raman orders cascaded SRS emission of an As
2S
3 microsphere
[92]; (f) Experimental spectrum of four-cascade Raman lasing
[85]; (g) Measured Raman spectrum when increasing the pump power to ~30 mW
[36] Fig. 10. Integrated photonic chalcogenide phase-change switching. (a) Schematic of the integrated photonic SiN-on insulator platform for broadband switching operation
[102]; (b) Spectral shift and loss characterization of GST using silicon microring resonators
[103]; (c) Low-loss broadband directional coupler switches based on GST
[104] Fig. 11. (a) Schematic of all-optical multi-level memory based on Si
3N
4 microring resonator
[106]; (b) Operation principle of an all-optical fully integrated on-chip multilevel memory; (c) A multibit and multiwavelength architecture
[96] Fig. 12. PCM based optical VMM and neural networks: (a) A chip-scale all-optical abacus based on GST on Si
3N
4[108]; (b) Photonic in-memory computing demonstrating optical scalar-scalar multiplication and matrix-vector multiplication
[110]; (c) An integrated photonic tensor core enabled by an optical frequency comb and in-memory computing cell arrays
[111] Materials | Refractive index | Types of waveguides | Dimension/μm2 | Loss/dB·cm−1 | Reference | As2S3 | 2.43 | Ring | 10×1.3 | 0.03 | [28]
| As2Se3 | 2.81 | Waveguide | 6.0×1.9 | < 0.78 | [41-42]
| Ge11.5As24S64.5 | 2.30 | Waveguide | 1.55×0.7 | 0.25 | [43-44]
| Ge11.5As24Se64.5 | 2.55 | Waveguide | 2.0×1.0 | 0.48 | [33]
| Ge23Sb7S70 | 2.22 | Ring | 0.75×0.63 | 0.84 | [45]
| Ge25Sb10S65 | 2.2 | Ring | 2.4×0.8 | 0.19 | [46]
| Ge28Sb12Se60 | 2.50 | Waveguide | 0.75×0.33 | 1.0 | [40]
| Ge28Sb12Se60 | 2.80 | Ring | 0.8×0.3 | 1.3 | [38]
|
|
Table 1. Current several typical chalcogenide waveguides at 1.55 µm
Materials | Types of waveguides | Dimension/μm2 | Wavelength/μm | Loss/dB·cm-1 | Reference | As2S3 | Waveguide | 4.0 × 2.5 | 3.6 | 0.75 | [47]
| As2S3 | Waveguide | 1.2 × 0.6 | 2.0 | 1.447 | [50]
| As2Se3 | Microdisk | 2.5 × 1.1 | 5.2 | 0.7 | [22]
| As2Se3 | Waveguide | 3.0 × 1.35 | 5.27 | 2 ± 4 | [51]
| Ge11.5As24Se64.5 | Waveguide | 4.0 × 1.25 | 5.0 | 0.3 | [48]
| Ge11.5As24Se64.5 | Ring | 2.5 × 2.25 | 5.2 | 0.84 | [49]
| Ge11.5As24Se64.5 | Waveguide | 4.0 × 2.2 | 3.8 - 5.0 | ~0.6 | [52]
| Ge23Sb7S70 | Microdisk | 3.0 × 1.8 | 5.2 | 0.21 | [53]
| Ge23Sb7S70 | Waveguide | 2.0 × 1.2 | 3.31 | 7.0 | [54]
| Ge23Sb7S70 | Waveguide | 2.0 × 1.0 | 3.31 | 8.0 | [55]
| Ge28Sb12Se60 | Waveguide | 2.8 × 1.0 | 4.319 | 5.1 | [56]
|
|
Table 2. Recent research progress of chalcogenide optical waveguide performance in mid-infrared band
Materials | Pump condition | Length/cm | SC spectrum band width/μm | Reference | As2S3 | 3.26 μm/7.5 ps/1.5 MHz | 6.6 | 2.9-4.2 | [47]
| Ge11.5As24Se64.5 | 5.0 μm/250 fs | 7.0 | 2.5-10 | [76]
| Ge11.5As24Se64.5 | 4.0 μm/320 fs/21 MHz | 1.0 | 1.8-7.5 | [77]
| Ge11.5As24Se64.5 | 4.184 μm/330 fs/21 MHz | 1.8 | 2-10 | [52]
| Ge20As20Se15Te45 | 5.8μm/120 fs | 0.5 | 2-13 | [78]
|
|
Table 3. Research progress of on-chip mid-infrared SC output in chalcogenide waveguides