• Infrared and Laser Engineering
  • Vol. 51, Issue 5, 20210326 (2022)
Jiawei Chen1、2, Yudong Li1, Liya Ma1, Yu Li3, and Qi Guo1
Author Affiliations
  • 1Key Laboratory of Functional Materials and Device for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
  • 3School of Optics and Photonics, Beijing Institute of Technology, Beijing 100081, China
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    DOI: 10.3788/IRLA20210326 Cite this Article
    Jiawei Chen, Yudong Li, Liya Ma, Yu Li, Qi Guo. Radiation effect of 850 nm vertical-cavity surface-emitting laser[J]. Infrared and Laser Engineering, 2022, 51(5): 20210326 Copy Citation Text show less
    STEM cross-sectional image of the 850 nm VCSEL; (b) Magnification of the partial structure of AlGaAs/GaAs MQWs
    Fig. 1. STEM cross-sectional image of the 850 nm VCSEL; (b) Magnification of the partial structure of AlGaAs/GaAs MQWs
    Curve of I-V characteristics with the amount of the injected after 10 MeV proton irradiation
    Fig. 2. Curve of I-V characteristics with the amount of the injected after 10 MeV proton irradiation
    Variation curve of L-I characteristics with fluence after 10 MeV proton irradiation
    Fig. 3. Variation curve of L-I characteristics with fluence after 10 MeV proton irradiation
    Relationship between normalized threshold current and proton fluence
    Fig. 4. Relationship between normalized threshold current and proton fluence
    Relationship between external quantum efficiency and proton flux
    Fig. 5. Relationship between external quantum efficiency and proton flux
    L-I-V characteristic curve after γ-ray irradiation
    Fig. 6. L-I-V characteristic curve after γ-ray irradiation
    Relationship between threshold current and annealing time of VCSEL under 20 mA current injection
    Fig. 7. Relationship between threshold current and annealing time of VCSEL under 20 mA current injection
    Relationship between light output power and annealing time of VCSEL under 25 mA current injection
    Fig. 8. Relationship between light output power and annealing time of VCSEL under 25 mA current injection
    Jiawei Chen, Yudong Li, Liya Ma, Yu Li, Qi Guo. Radiation effect of 850 nm vertical-cavity surface-emitting laser[J]. Infrared and Laser Engineering, 2022, 51(5): 20210326
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