Excimer laserg are noted primarily for their ability to produce high output powers at ultraviolet wavelengths. This ability has made them attractive for lithography application. Excimer lasers are many times more powerful than conventional deep-ultraviolet sources like xenon mercury lamp. An experiment of contact photolithography in the order of a micrometer was demonstrated by using an ultraviolet XeCl excimer laser. An X-ray preionized discharge pumped xenonohloride laser was used to expose a thin layer of resist. The la^er, whioh emits at 308nm, delivered 10MW of peak power in a 2×2 oma beam, A ehromeon-quartz mask with features ranging from 1,0 ?10 gm was employed, tfor contact photolithography. After optimization of the laser power intensity on the resist^ the best laser power intensity for contact photolithography was found to bo about 0.2.Jim2 under our experimental condition. The pattern on the resist shows that linewidths down to 1.5 μτα can be resolved, and 2 .5/xm lines can meet iihe requirements of LSI. This technique has great implications for phoiiolithography because is has high resolutions and ultra-fast exposure times.