Researching | Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Journals >Journal of Semiconductors >Volume 43 >Issue 12 >Page 122101 > Article

Journal of Semiconductors
Vol. 43, Issue 12, 122101 (2022)

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

Tieshi Wei^1、2, Xuefei Li^1、*, Zhiyun Li³, Wenxian Yang¹, Yuanyuan Wu¹, Zhiwei Xing¹, and Shulong Lu^1、**

Author Affiliations

¹Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

²Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China

³Vacuum Interconnected Nanotech Workstation (NANO-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China

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DOI: 10.1088/1674-4926/43/12/122101 Cite this Article

Tieshi Wei, Xuefei Li, Zhiyun Li, Wenxian Yang, Yuanyuan Wu, Zhiwei Xing, Shulong Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2022, 43(12): 122101 Copy Citation Text

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References

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Tieshi Wei, Xuefei Li, Zhiyun Li, Wenxian Yang, Yuanyuan Wu, Zhiwei Xing, Shulong Lu. Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy[J]. Journal of Semiconductors, 2022, 43(12): 122101

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