• Microelectronics
  • Vol. 51, Issue 1, 121 (2021)
ZHONG Chonghui1 and YU Xiaoquan2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.2000522 Cite this Article
    ZHONG Chonghui, YU Xiaoquan. Comparative Study on Total Dose Irradiation Characteristics of Deep Submicron CMOS Transistors[J]. Microelectronics, 2021, 51(1): 121 Copy Citation Text show less
    References

    [1] HU R B, WANG Y X, LU W. The total dose effects on the 1/f noise of deep submicron CMOS transistors [J]. J Semicond, 2014, 35(2): 51-56.

    [2] WANG Y X, HU R B, LI R Z, et al. Total dose effects on the matching properties of deep submicron MOS transistors [J]. J Semicond, 2014, 35(6): 53-57.

    [5] KAUPPILA A V, BHUVA B L, LOVELESS T D, et al. Effect of negative bias temperature instability on the single event upset response of 40 nm flip–flops [J]. IEEE Trans Nucl Sci, 2012, 59(6): 2651-2657.

    [6] GUO T L, ZHAO F Z, LIU G, et al. Total dose radiation hardened PDSOI CMOS 64 k SRAMs [J]. J Semicond, 2007, 28(8): 1184-1187.

    [7] DING L L, YAO B, GUO H X, et al. Worst case total dose radiation effect in deep-submicron SRAM circuits [J]. J Semicond, 2012, 33(7): 121-125.

    [8] BINKLEY D M, HOPPER C E, CRESSLER J D, et al. Noise performance of 0.35 μm SOI CMOS devices and micropower preamplifier following 63-MeV, 1 Mrad(Si) proton irradiation [J]. IEEE Trans Nucl Sci, 2004, 51(6): 3788-3794.

    ZHONG Chonghui, YU Xiaoquan. Comparative Study on Total Dose Irradiation Characteristics of Deep Submicron CMOS Transistors[J]. Microelectronics, 2021, 51(1): 121
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