• Laser & Optoelectronics Progress
  • Vol. 57, Issue 23, 231604 (2020)
Li Liu1、2, Caiyan Li1, Qilian Zhang1, Xiaowei Sun1, and Hao Sun1、*
Author Affiliations
  • 1Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/LOP57.231604 Cite this Article Set citation alerts
    Li Liu, Caiyan Li, Qilian Zhang, Xiaowei Sun, Hao Sun. Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231604 Copy Citation Text show less
    PIN diode structure and its equivalent circuit. (a) PIN diode structure; (b) forward bias equivalent circuit; (c) reverse bias equivalent circuit
    Fig. 1. PIN diode structure and its equivalent circuit. (a) PIN diode structure; (b) forward bias equivalent circuit; (c) reverse bias equivalent circuit
    Structure of heterojunction PIN diode
    Fig. 2. Structure of heterojunction PIN diode
    S parameters of heterojunction and homojunction
    Fig. 3. S parameters of heterojunction and homojunction
    Insertion loss of different x in AlxGa1-xAs
    Fig. 4. Insertion loss of different x in AlxGa1-xAs
    I-V characteristics of PIN diode with different I-layer thicknesses obtained by TCAD simulation. (a) Forward bias; (b) reverse bias
    Fig. 5. I-V characteristics of PIN diode with different I-layer thicknesses obtained by TCAD simulation. (a) Forward bias; (b) reverse bias
    Insertion loss at different I-layer thicknesses obtained by TCAD simulation
    Fig. 6. Insertion loss at different I-layer thicknesses obtained by TCAD simulation
    I-V performance of PIN diode
    Fig. 7. I-V performance of PIN diode
    Tested S parameters of PIN diode
    Fig. 8. Tested S parameters of PIN diode
    LayerMaterialDoping concentration /cm-3Thickness /μm
    P-GaAsGaAs3×10190.02
    P-AlGaAsAlxGa1-xAs5×10180.20
    IGaAsNonew
    NGaAs5×10180.80
    Table 1. Material parameters of epitaxial structure
    ResultOpeningvoltage /VBreakdownvoltage /V
    Simulation1.0528
    Test1.0626
    Table 2. Comparison of I-V characteristic obtained by test and simulation
    Li Liu, Caiyan Li, Qilian Zhang, Xiaowei Sun, Hao Sun. Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231604
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