Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure

Li Liu; Caiyan Li; Qilian Zhang; Xiaowei Sun; Hao Sun

doi:10.3788/LOP57.231604

Journals >Laser & Optoelectronics Progress >Volume 57 >Issue 23 >Page 231604 > Article

Laser & Optoelectronics Progress
Vol. 57, Issue 23, 231604 (2020)

Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure

Li Liu^1、2, Caiyan Li¹, Qilian Zhang¹, Xiaowei Sun¹, and Hao Sun^1、*

Author Affiliations

¹Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/LOP57.231604 Cite this Article Set citation alerts

Li Liu, Caiyan Li, Qilian Zhang, Xiaowei Sun, Hao Sun. Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231604 Copy Citation Text

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Li Liu, Caiyan Li, Qilian Zhang, Xiaowei Sun, Hao Sun. Design and Analysis of a Heterojunction AlGaAs/GaAs PIN Diode Structure[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231604

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