Fractional density of states and the overall spontaneous emission control ability of a three-dimensional photonic crystal

Menglin Chen; Zhijun Luo; Yanan Liu; Zongsong Gan

doi:10.3788/COL201917.041601

Journals >Chinese Optics Letters >Volume 17 >Issue 4 >Page 041601 > Article

Chinese Optics Letters
Vol. 17, Issue 4, 041601 (2019)

Fractional density of states and the overall spontaneous emission control ability of a three-dimensional photonic crystal

Menglin Chen¹, Zhijun Luo¹, Yanan Liu¹, and Zongsong Gan^{1、2、3、*}

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

²Key Laboratory of Information Storage Systems, Ministry of Education, Huazhong University of Science and Technology, Wuhan 430074, China

³Shenzhen Research Institute of Huazhong University of Science and Technology, Shenzhen 518057, China

show less

DOI: 10.3788/COL201917.041601 Cite this Article Set citation alerts

Menglin Chen, Zhijun Luo, Yanan Liu, Zongsong Gan. Fractional density of states and the overall spontaneous emission control ability of a three-dimensional photonic crystal[J]. Chinese Optics Letters, 2019, 17(4): 041601 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Abstract

Fractional density of states (FDOS) hinders the accurate measuring of the overall spontaneous emission (SE) control ability of a three-dimensional (3D) photonic crystal (PC) with the current widely used SE decay lifetime measurement systems. Based on analyzing the FDOS property of a 3D PC from theory and simulation, the excitation focal spot position averaged FDOS with a distribution broadening parameter was proposed to accurately reflect the overall SE control ability of the 3D PC. Experimental work was done to confirm that our proposal is effective, which can contribute to comprehensively characterizing the SE control performance of photonic devices with quantified parameters.