• Journal of Infrared and Millimeter Waves
  • Vol. 20, Issue 1, 11 (2001)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, and [in Chinese]3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHONON-INDUCED RAMAN SCATTERING IN GaNAs[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 11 Copy Citation Text show less
    References

    [1] Bellaiche L, Wei S H, Zunger A. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP,Phys. Rev. B.1996,54:17568 -17576

    [2] Francoeur S, Nikishin S A, Jin C, et al. Excitons bound to nitrogen clusters in GaAsN,Appl.Phys. Lett.,1999,75(1 1): 1538-1541

    [3] Prokofyeva T, Sauncy T, Seon M, et al. Raman studies of nitroge n incorporation in GaAsN, Appl.Phys.Lett.,1998,73(10): 1409-141 1; Minatairov A M, Blagnov PA, Melehin V G, et al. Ordering effects in R aman spectra of coherently strained GaAsN,Phys.Rev.B,1997,56(24 ): 15836-15841

    [4] Cheong H M, Zhang Y, Mascarenhas A, et al. Nitrogen-induced levels in GaAsN studied with resonant Raman scattering, Phys. Rev.B,2000,61(20): 13687-13689

    [5] Jones E D, Modine N A, Allerman A A, et al. Band structures of InGaAsN alloysand effects of pressure,Phys.Rev.B,1999,60(7): 4 430-4433

    [6] Alt H,Wiedemann C H, Bethge B K. Spectroscopy of introgen-relatedc enters in GaAs, Material Science Forum.,1997,258~263:867-872

    [7] Li L H, Pan Z, Zhuang W,et al. Effects of rapid thermal annealing on the optical properties of GaNAs/GaAs single quautum well structure grown by molecular beam epitaxy,Jour. Appl. Phys.,2000,87: 245

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. PHONON-INDUCED RAMAN SCATTERING IN GaNAs[J]. Journal of Infrared and Millimeter Waves, 2001, 20(1): 11
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