The Raman scattering spectra of MBE-grown GaNA s epilayers were investigated. The resonant enhancement of Raman scattering due to the E₊ states in the conduction band was observed and the Raman peaks r elated to the phonons at non-Γ points of the Brillouin Zone were detected.It w as clearly seen that the local vibrational mode induced by nitrogen impurities e volves to the GaN-like lattice phonon mode when the nitrogen content increases. By comparing the Raman spectra measured before and after 850℃ rapid thermal an nealing, it was tentatively suggested that two weak peaks were induced by the pa iring or clustering effect of nitrogen.