Correlation between Everson etch pits and material defects of （112） B CdZnTe substrates

Chang-He ZHOU; Jian-Rong YANG; Mei-Hua ZHOU; Chao XU

doi:10.11972/j.issn.1001-9014.2021.04.002

[1] M Carmody, A Yulius, D Edwall et al. Recent progress in MBE growth of CdTe and HgCdTe on (211)B GaAs substrates. Journal of Electronic Materials, 41, 2719-2724(2012).

[2] J Wenisch, D Eich, H Lutz et al. MBE growth of MCT on GaAs substrates at AIM. Journal of Electronic Materials, 41, 2828-2832(2012).

[3] O Gravrand, G Destefanis, S Bisotto et al. Issues in HgCdTe research and expected progress in infrared detector fabrication. Journal of Electronic Materials, 42, 3349-3358(2013).

[4] P Jerram, J Beletic. Teledyne's high performance infrareddetectors for space missions. Proceedings of SPIE, 11180, 111803D01-111803D10(2019).

[5] U Gilabert, A B Trigubó, N E W de Reca. Chemical etching of CdZnTe (111) surfaces. Materials Science and Engineering: B, 27, 11-15(1994).

[6] Cong-Feng LIU, Wei-Zheng FANG, Bu-Hua TU et al. Morphology characteristics of etch pits on CdZnTe crystals developed by usual etchants. Infrared and Laser Engineering, 35, 759-763(2006).

[7] Shi-Wen SUN, Song-Yin SUI, He-Li et al. X-ray diffraction topography and etched surface morphology of CdZnTe single crystals. J. Infrared Millim. Waves, 34, 291-296(2015).

[8] P Rudolph. Dislocation cell structures in melt-grown semiconductor compound crystals. Crystal Research and Technology, 40, 7-20(2005).

[9] P Rudolph. Dislocation patterning and bunching in crystals and epitaxial layers - a review. Crystal Research and Technology, 52, 1600171(2017).

[10] Xiao-Pan CUI, Wei-Zheng FANG, Chuan-Jie ZHANG et al. Characteristics of CdZnTe defects revealed by etch pits. Infrared Laser Engineering, 39, 405-410(2010).

[11] X P Cui, W Zh Fang, S W Sun et al. Characteristics of the dislocations in CdZnTe crystals revealed by etch pits. Journal of Crystal Growth, 321, 40-44(2011).

[12] H X Yu, J R Yang, J J Zhang et al. Measurement and evaluation of the defects in Cd1-xZnxTe materials by observing their etch pits in real time. Journal of Crystal Growth, 506, 1-7(2019).

[13] C H Zhou, J R Yang, H X Yu et al. Study of the extended defects in CdZnTe crystal. Journal of Crystal Growth, 544, 125725(2020).

[14] W J Everson, C K Ard, J L Sepich et al. Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy. Journal of Electronic Materials, 24, 505-510(1995).

[15] Hui-Ming GU, Jian-Rong YANG, Xin-Qiang CHEN et al. Difference of EPDs on (111)B and (211)B faces of CdZnTe crystals by using Everson etch. Journal of Syntechtic Cyrstals, 28, 172-176(1999).

[16] L Burgess, F J Kumar, J Mackenzie. Orientation dependence of etch pit density in (111) and (211) CdZnTe Everson etch. Journal of Electronic Materials, 44, 3277-3282(2015).

[17] J R Yang, H M Gu, X Q Chen et al. Dislocation assessment of CdZnTe by chemical etching on both 111B and 211B faces. Journal of Crystal Growth, 234, 337-342(2002).

[18] J Shen, D K Aidun, L L Regel et al. Etch pits originating from precipitates in CdTe and Cd1-xZnxTe grown by the vertical Bridgman-Stockbarger Method. Journal of Crystal Growth, 132, 351-356(1993).

[19] Cong-Feng LIU, Jian-Rong YANG. Application of Everson etchant for characterization of dislocations in CdZnTe material. Infrared, 12, 17-27(2004).

CLP Journals