Researching | High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

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Chinese Optics Letters
Vol. 17, Issue 9, 090401 (2019)

High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area

Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü^*, and Zhihong Feng^**

Author Affiliations

National Key Laboratory of ASIC, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China

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DOI: 10.3788/COL201917.090401 Cite this Article Set citation alerts

Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, Zhihong Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area[J]. Chinese Optics Letters, 2019, 17(9): 090401 Copy Citation Text

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Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, Zhihong Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area[J]. Chinese Optics Letters, 2019, 17(9): 090401

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