Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, Zhihong Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area[J]. Chinese Optics Letters, 2019, 17(9): 090401
- Chinese Optics Letters
- Vol. 17, Issue 9, 090401 (2019)
Fig. 1. (a) Schematic structure of the large-area 4H-SiC p-i-n UV APD, where the drawing is not to scale; (b) the top-view image of one fabricated 4H-SiC APD with 800 μm diameter; (c) profile of the beveled mesa with an angle of 8°.
Fig. 2. (a) Dark current of fabricated APDs with various sizes; (b) dark current as a function of device diameter at the reverse voltages of 160 V and 170 V.
Fig. 3. UV detection performance of 800 μm diameter 4H-SiC p-i-n APD: (a) I –V measurement results; (b) spectral response characteristics.
Fig. 4. Comparison of our large-area 4H-SiC p-i-n APD with the results of others’ work.
Fig. 5. UV imaging measurement of our fabricated 4H-SiC p-i-n APD: (a) schematic diagram of the experimental setup; (b) UV photo image of HSRI logo obtained by our 4H-SiC APD-based UV detector.
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