• Acta Photonica Sinica
  • Vol. 49, Issue 6, 0604002 (2020)
Yan-xu ZHU*, Yan-xu ZHU*, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, and Tie-fan HU
Author Affiliations
  • Key Laboratory of Photoelectron Technology Ministry of Education, Beijing University of Technology, Beijing 100124, China
  • show less
    DOI: 10.3788/gzxb20204906.0604002 Cite this Article
    Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. Acta Photonica Sinica, 2020, 49(6): 0604002 Copy Citation Text show less
    References

    [1] Xi-sheng ZHANG, Chun-yu YAN, Ti-hui WU. Fabrication of CsPbBrI2 quantum dots and its photodetector performance. Acta Photonica Sinica, 49, 123002(2020).

    [2] L NANVER, Lin QI, V MOHAMMADI. Robust UV/VUV/EUV pureB photodiode detector technology with High CMOS compatibility. IEEE Journal of Selected Topics in Quantum Electronics, 20, 306-316(2014).

    [3] Zhen-qian YANG, Yu-hao DENG, , . High-performance single-crystalline perovskite thin-film photodetector. Advanced Materials, 30, 1704333(2018).

    [4] O AMBACHER, B FOUTZ, J SMART. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures. Journal of Applied Physics, 87, 334-344(2000).

    [5] G CLAIRE, M N HOCK, CHU S N GEORGE. Intersubband absorption at λ1.55μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers. Applied Physics Letters, 77, 3722-3724(2000).

    [6] J ZHU, X ZHOU, L JING. Piezotronic effect modulated flexible AlGaN/GaN high-electron-mobility transistors. ACS Nano, 13, 13161-13168(2019).

    [7] C C CHEN, H I CHEN, I P LIU. Enhancement of hydrogen sensing performance of a GaN-based Schottky diode with a hydrogen peroxide surface treatment. Sensors and Actuators B:Chemical, 211, 303-309(2015).

    [8] Jin-lun LI, Shao-hui CUI, Jing ZHANG. Research of InP-based room temperature HEMT terahertz detector enhanced by butterfly antenna. Infrared and Laser Engineering, 48, 131-138(2019).

    [9] F KHAN, W KHAN, S D KIM. High-performance ultraviolet light detection using nano-scale-fin isolation AlGaN/GaN heterostructures with ZnO nanorods. Nanomaterials, 9, 9030440(2019).

    [10] Zhi-jun HU, Ming-wen TIAN, B NYSTEN. Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories. Nature Materials, 8, 62-67(2008).

    [11] K T BUTLER, J M FROST, A WALSH. Ferroelectric materials for solar energy conversion:photoferroics revisited. Energy & Environmental Science, 8, 838-848(2015).

    [12] Tian-yi CAI, Sheng JU. Photovoltaic effect in ferroelectrics. Acta Physica Sinica, 67, 157081(2018).

    [13] T HAMATANI, Y SHIRAHATA, Y OHISHI. Arsenic and chlorine co-doping to CH3NH3PbI3 perovskite solar cells. Advances in Materials Physics and Chemistry, 7, 1-10(2017).

    [14] A V ZENKEVICH, Yu MATVEYEV, K MAKSIMOVA. Giant bulk photovoltaic effect in thin ferroelectric BaTiO3 films. Physical Review B, 90, 161409(2014).

    [15] Xiong LI, Chen-yi YI, Jing-shan LUO. Improved performance and stability of perovskite solar cells by crystal crosslinking with alkylphosphonic acid ω -ammonium chlorides. Nature Chemistry, 7, 703-711(2015).

    [16] Chun-hsun LEE, Wei-ren LIN, Yu-hsuan LEE. Characterizations of enhancement-mode double heterostructure GaN HEMTs with gate field plates. IEEE Transactions on Electron Devices, 65, 488-492(2018).

    [17] T TAKAYUKI, M MASAKI, K TAKAYUKI. Fabrication of L10-FeNi phase by sputtering with rapid thermal annealing. Journal of Alloys & Compounds, 750, 164-170(2018).

    [18] Fen-gang ZHENG, Jian-ping CHEN, Xin-wan LI. Improved dielectric and ferroelectric characteristics of highly (111)-oriented Pb(Zr0.52Ti0.48)O3 films produced by Sol-Gel method. Acta Physica Sinica, 55, 3076-3072(2006).

    [19] Ke-xue SUN, Shu-yi ZHANG, Xiu-ji SHUI. Experimental and numerical study on transverse piezoelectricity of x BiInO 3-(1-x)PbTiO3 films by multilayer cantilevers. Japanese Journal of Applied Physics, 57, 025801(2018).

    [20] En-wei SUN, Rui ZHANG, Xin ZHAO. Electro-optic properties of relaxor ferroelectric 0.93Pb(Zn1/3Nb2/3)O3-0.07PbTiO3 single crystal. Acta Photonica Sinica, 38, 1442-1445(2009).

    [21] Hong QIAO, Jian YUAN, Zai-quan XU. Broadband photodetectors based on graphene-Bi2Te3 heterostructure. ACS Nano, 9, 1886-1894(2015).

    [22] P S PARK, S RAJAN. Simulation of short-channel effects in N-and Ga-Polar AlGaN/GaN HEMTs. IEEE Transactions on Electron Devices, 58, 704-708(2011).

    Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. Acta Photonica Sinica, 2020, 49(6): 0604002
    Download Citation